Overview
The 2N7002K is an N-Channel enhancement mode MOSFET designed for general-purpose switching and amplification applications. This device is known for its low on-resistance and high switching speed, making it suitable for a wide range of electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Drain Current (ID) | 500 | mA |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 500 mA | 2 | Ω |
| On-Resistance (RDS(on)) at VGS = 4.5 V, ID = 200 mA | 4 | Ω |
| Forward Transconductance (gfs) at VDS = 10 V, ID = 200 mA | 100 | mS |
| Diode Forward Voltage (VSD) at IS = 200 mA, VGS = 0 V | 1.3 | V |
| Total Gate Charge (Qg) at VDS = 10 V, VGS = 4.5 V, ID ≈ 250 mA | 0.4 - 0.6 | nC |
| Input Capacitance (Ciss) at VDS = 25 V, VGS = 0 V, f = 1 MHz | 30 | pF |
| Output Capacitance (Coss) | 6 | pF |
| Reverse Transfer Capacitance (Crss) | 2.5 | pF |
| Turn-on Time (td(on)) at VDD = 30 V, RL = 150 Ω, ID ≈ 200 mA, VGEN = 10 V, Rg = 10 Ω | 25 | ns |
| Turn-off Time (td(off)) | 35 | ns |
Key Features
- Low on-resistance (RDS(on)) for efficient switching.
- High switching speed with fast turn-on and turn-off times.
- Enhancement mode operation for easy control.
- High drain-source voltage rating (60 V) for robust performance.
- Low input capacitance and high forward transconductance for improved circuit performance.
Applications
The 2N7002K MOSFET is suitable for a variety of applications including:
- General-purpose switching circuits.
- Amplification and signal processing.
- Power management and control circuits.
- Automotive and industrial control systems.
- Consumer electronics and appliances.
Q & A
- What is the maximum drain-source voltage (VDS) of the 2N7002K MOSFET?
The maximum drain-source voltage is 60 V. - What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 500 mA?
The typical on-resistance is 2 Ω. - What is the forward transconductance (gfs) at VDS = 10 V and ID = 200 mA?
The forward transconductance is 100 mS. - What is the diode forward voltage (VSD) at IS = 200 mA and VGS = 0 V?
The diode forward voltage is 1.3 V. - What is the total gate charge (Qg) at VDS = 10 V, VGS = 4.5 V, and ID ≈ 250 mA?
The total gate charge is between 0.4 and 0.6 nC. - What are the turn-on and turn-off times of the 2N7002K MOSFET?
The turn-on time is approximately 25 ns, and the turn-off time is approximately 35 ns. - What are some common applications of the 2N7002K MOSFET?
Common applications include general-purpose switching, amplification, power management, automotive and industrial control systems, and consumer electronics. - What is the input capacitance (Ciss) at VDS = 25 V, VGS = 0 V, and f = 1 MHz?
The input capacitance is 30 pF. - What is the output capacitance (Coss) of the 2N7002K MOSFET?
The output capacitance is 6 pF. - What is the reverse transfer capacitance (Crss) of the 2N7002K MOSFET?
The reverse transfer capacitance is 2.5 pF.
