NVTFS4C05NTAG
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onsemi NVTFS4C05NTAG

Manufacturer No:
NVTFS4C05NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 22A/102A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS4C05NTAG is a high-performance, single N-channel power MOSFET manufactured by onsemi. This surface-mount device is designed to offer low on-resistance, low capacitance, and optimized gate charge, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a WDFN-8 case, which provides a compact and thermally efficient solution for modern electronic designs.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Drain Current-Max (ID)22.0 A
Drain-source On Resistance-Max0.0051 ohm
Package / CaseWDFN-8

Key Features

  • Low on-resistance (Rds(on)) of 0.0051 ohm, minimizing power losses.
  • Low capacitance for improved switching performance.
  • Optimized gate charge for efficient switching.
  • Compact WDFN-8 package for thermal efficiency and space-saving designs.
  • High drain-source breakdown voltage of 30 V, ensuring reliability in various applications.

Applications

The NVTFS4C05NTAG MOSFET is versatile and can be used in a range of applications, including but not limited to:

  • Power management systems.
  • DC-DC converters.
  • Motor control and drive systems.
  • Switching power supplies.
  • Automotive and industrial power electronics.

Q & A

  1. What is the maximum drain-source breakdown voltage of the NVTFS4C05NTAG?
    The maximum drain-source breakdown voltage is 30 V.
  2. What is the maximum drain current (ID) of the NVTFS4C05NTAG?
    The maximum drain current is 22.0 A.
  3. What is the typical on-resistance (Rds(on)) of the NVTFS4C05NTAG?
    The typical on-resistance is 0.0051 ohm.
  4. In what package is the NVTFS4C05NTAG available?
    The NVTFS4C05NTAG is available in a WDFN-8 package.
  5. What are some key features of the NVTFS4C05NTAG?
    Key features include low on-resistance, low capacitance, optimized gate charge, and a compact WDFN-8 package.
  6. What are some common applications for the NVTFS4C05NTAG?
    Common applications include power management systems, DC-DC converters, motor control and drive systems, switching power supplies, and automotive and industrial power electronics.
  7. Who is the manufacturer of the NVTFS4C05NTAG?
    The manufacturer is onsemi.
  8. What is the polarity of the NVTFS4C05NTAG MOSFET?
    The polarity is N-Channel.
  9. How many channels does the NVTFS4C05NTAG have?
    The NVTFS4C05NTAG has 1 channel.
  10. What is the significance of the low capacitance in the NVTFS4C05NTAG?
    The low capacitance improves switching performance by reducing the time required to charge and discharge the gate.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1988 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS4C05NWFTAG
NVTFS4C05NWFTAG
MOSFET N-CH 30V 22A/102A 8WDFN

Similar Products

Part Number NVTFS4C05NTAG NVTFS4C25NTAG NVTFS4C08NTAG NVTFS4C06NTAG NVTFS4C02NTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 102A (Tc) 10.1A (Ta), 22.1A (Tc) 17A (Ta) 21A (Ta) 28.3A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 30A, 10V 17mOhm @ 10A, 10V 5.9mOhm @ 30A, 10V 4.2mOhm @ 30A, 10V 2.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 10.3 nC @ 10 V 18.2 nC @ 10 V 26 nC @ 10 V 20 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1988 pF @ 15 V 500 pF @ 15 V 1113 pF @ 15 V 1683 pF @ 15 V 2980 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 68W (Tc) 3W (Ta), 14.3W (Tc) 3.1W (Ta), 31W (Tc) 3.1W (Ta), 37W (Tc) 3.2W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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