NVMFS6H824NWFT1G
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onsemi NVMFS6H824NWFT1G

Manufacturer No:
NVMFS6H824NWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 19A/103A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS6H824NWFT1G is a high-performance, single N-channel power MOSFET designed and manufactured by onsemi. This device is part of onsemi's automotive-grade MOSFET series, qualified to the AEC-Q101 standard, ensuring reliability and durability in demanding automotive and industrial applications. The MOSFET features a compact DFNW5 package with wettable flanks, which enhances solderability and inspection capabilities.

Key Specifications

ParameterValue
TypeN-Channel Power MOSFET
SeriesAutomotive, AEC-Q101
PackageDFNW5 (Tape & Reel)
Vdss (Drain-Source Voltage)80V
Maximum Operating Temperature+175°C
Power Dissipation (Pd)115 W
Channel ModeEnhancement

Key Features

  • High voltage rating of 80V, making it suitable for a wide range of applications.
  • Compact DFNW5 package with wettable flanks for improved solderability and inspection.
  • AEC-Q101 qualified, ensuring high reliability and performance in automotive and industrial environments.
  • High power dissipation capability of up to 115 W.
  • Enhancement mode operation for efficient switching.

Applications

The NVMFS6H824NWFT1G is designed for use in various automotive and industrial applications, including but not limited to:

  • Automotive systems such as power steering, anti-lock braking systems (ABS), and electric power steering (EPS).
  • Industrial power supplies and motor control systems.
  • High-power DC-DC converters.
  • Power management in electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum operating temperature of the NVMFS6H824NWFT1G MOSFET?
    The maximum operating temperature is +175°C.
  2. What is the drain-source voltage (Vdss) rating of this MOSFET?
    The Vdss rating is 80V.
  3. What package type is used for the NVMFS6H824NWFT1G?
    The package type is DFNW5, available in Tape & Reel.
  4. Is the NVMFS6H824NWFT1G AEC-Q101 qualified?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What is the power dissipation (Pd) capability of this MOSFET?
    The power dissipation capability is up to 115 W.
  6. What is the channel mode of operation for the NVMFS6H824NWFT1G?
    The channel mode is enhancement.
  7. What are some common applications for the NVMFS6H824NWFT1G?
    Common applications include automotive systems, industrial power supplies, high-power DC-DC converters, and power management in electric vehicles.
  8. Why is the DFNW5 package with wettable flanks beneficial?
    The DFNW5 package with wettable flanks enhances solderability and inspection capabilities.
  9. Where can I find detailed specifications for the NVMFS6H824NWFT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Mouser and Digi-Key.
  10. Is the NVMFS6H824NWFT1G suitable for high-power applications?
    Yes, it is designed for high-power applications with a high voltage rating and significant power dissipation capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2470 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS6H824NWFT1G NVMFS6H824NLWFT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 103A (Tc) 20A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA 2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 40 V 2900 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 115W (Tc) 3.8W (Ta), 116W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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