NVGS5120PT1G
  • Share:

onsemi NVGS5120PT1G

Manufacturer No:
NVGS5120PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.8A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVGS5120PT1G is a single P-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is housed in a TSOP-6 package and is notable for its low RDS(on) and high voltage rating. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The MOSFET is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS−20V
Continuous Drain Current (TA = 25°C)ID-2.5A
Continuous Drain Current (TA = 85°C)ID-2.0A
Gate Threshold VoltageVGS(TH)-1.0 to -3.0V
Drain-to-Source On Resistance (VGS = -10 V, ID = -2.9 A)RDS(on)72 to 111
Forward TransconductancegFS10.1S
Input CapacitanceCISS942pF
Output CapacitanceCOSS72pF
Total Gate ChargeQG(TOT)18.1nC
Turn-On Delay Timetd(ON)8.7ns
Rise Timetr4.9ns
Turn-Off Delay Timetd(OFF)38ns
Fall Timetf12.8ns

Key Features

  • 60 V BVds with low RDS(on) in a TSOP-6 package
  • 4.5 V gate rating
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications
  • Pb-free, halogen-free, and RoHS compliant
  • High side load switch and power switch capabilities

Applications

  • High side load switch
  • Power switch for printers and communication equipment
  • Automotive applications requiring unique site and control change requirements

Q & A

  1. What is the maximum drain-to-source voltage of the NVGS5120PT1G? The maximum drain-to-source voltage is -60 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -2.5 A.
  3. Is the NVGS5120PT1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  4. What is the gate threshold voltage range? The gate threshold voltage range is -1.0 to -3.0 V.
  5. What is the typical drain-to-source on resistance at VGS = -10 V and ID = -2.9 A? The typical drain-to-source on resistance is 72 to 111 mΩ.
  6. What are the typical turn-on and turn-off delay times? The typical turn-on delay time is 8.7 ns, and the typical turn-off delay time is 38 ns.
  7. Is the NVGS5120PT1G lead-free and RoHS compliant? Yes, it is lead-free, halogen-free, and RoHS compliant.
  8. What are some common applications of the NVGS5120PT1G? Common applications include high side load switches and power switches for printers and communication equipment.
  9. What is the forward transconductance of the NVGS5120PT1G? The forward transconductance is 10.1 S.
  10. What is the total gate charge at VGS = -10 V and ID = -2.9 A? The total gate charge is 18.1 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:111mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:942 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.91
301

Please send RFQ , we will respond immediately.

Same Series
NVGS5120PT1G
NVGS5120PT1G
MOSFET P-CH 60V 1.8A 6TSOP

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD