NVGS5120PT1G
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onsemi NVGS5120PT1G

Manufacturer No:
NVGS5120PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.8A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVGS5120PT1G is a single P-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is housed in a TSOP-6 package and is notable for its low RDS(on) and high voltage rating. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The MOSFET is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS−20V
Continuous Drain Current (TA = 25°C)ID-2.5A
Continuous Drain Current (TA = 85°C)ID-2.0A
Gate Threshold VoltageVGS(TH)-1.0 to -3.0V
Drain-to-Source On Resistance (VGS = -10 V, ID = -2.9 A)RDS(on)72 to 111
Forward TransconductancegFS10.1S
Input CapacitanceCISS942pF
Output CapacitanceCOSS72pF
Total Gate ChargeQG(TOT)18.1nC
Turn-On Delay Timetd(ON)8.7ns
Rise Timetr4.9ns
Turn-Off Delay Timetd(OFF)38ns
Fall Timetf12.8ns

Key Features

  • 60 V BVds with low RDS(on) in a TSOP-6 package
  • 4.5 V gate rating
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications
  • Pb-free, halogen-free, and RoHS compliant
  • High side load switch and power switch capabilities

Applications

  • High side load switch
  • Power switch for printers and communication equipment
  • Automotive applications requiring unique site and control change requirements

Q & A

  1. What is the maximum drain-to-source voltage of the NVGS5120PT1G? The maximum drain-to-source voltage is -60 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -2.5 A.
  3. Is the NVGS5120PT1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified.
  4. What is the gate threshold voltage range? The gate threshold voltage range is -1.0 to -3.0 V.
  5. What is the typical drain-to-source on resistance at VGS = -10 V and ID = -2.9 A? The typical drain-to-source on resistance is 72 to 111 mΩ.
  6. What are the typical turn-on and turn-off delay times? The typical turn-on delay time is 8.7 ns, and the typical turn-off delay time is 38 ns.
  7. Is the NVGS5120PT1G lead-free and RoHS compliant? Yes, it is lead-free, halogen-free, and RoHS compliant.
  8. What are some common applications of the NVGS5120PT1G? Common applications include high side load switches and power switches for printers and communication equipment.
  9. What is the forward transconductance of the NVGS5120PT1G? The forward transconductance is 10.1 S.
  10. What is the total gate charge at VGS = -10 V and ID = -2.9 A? The total gate charge is 18.1 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:111mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:942 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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NVGS5120PT1G
NVGS5120PT1G
MOSFET P-CH 60V 1.8A 6TSOP

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