NVF5P03T3G
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onsemi NVF5P03T3G

Manufacturer No:
NVF5P03T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 3.7A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVF5P03T3G is a P-Channel power MOSFET produced by onsemi, designed for high-efficiency applications. This device is part of the NTF5P03 and NVF5P03 series, which are known for their ultra-low RDS(on) and logic level gate drive capabilities. The NVF5P03T3G is packaged in a miniature SOT-223 surface mount package, making it suitable for space-constrained designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. The device is also Pb-Free and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-to-Source Voltage VDSS -30 - -30 V
Drain-to-Gate Voltage VDGR -30 - -30 V
Gate-to-Source Voltage - Continuous VGS ±20 - ±20 V
Drain Current - Continuous @ TA = 25°C ID -5.2 - -5.2 A
Pulsed Drain Current IDM -26 - -26 A
Static Drain-to-Source On-Resistance RDS(on) - 100 150
Gate Threshold Voltage VGS(th) -1.0 -1.75 -3.0 V
Operating and Storage Temperature Range TJ, Tstg -55 to 150 - -55 to 150 °C

Key Features

  • Ultra Low RDS(on) of 100 mΩ (typical)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Miniature SOT-223 Surface Mount Package
  • Avalanche Energy Specified
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

  • DC-DC Converters
  • Power Management
  • Motor Controls
  • Inductive Loads

Q & A

  1. What is the maximum drain-to-source voltage of the NVF5P03T3G?

    The maximum drain-to-source voltage (VDSS) is -30 V.

  2. What is the typical on-resistance (RDS(on)) of the NVF5P03T3G?

    The typical on-resistance (RDS(on)) is 100 mΩ.

  3. What is the continuous drain current rating at 25°C?

    The continuous drain current rating at 25°C is -5.2 A.

  4. Is the NVF5P03T3G AEC-Q101 qualified?
  5. What is the operating and storage temperature range of the NVF5P03T3G?

    The operating and storage temperature range is -55 to 150°C.

  6. What package type is used for the NVF5P03T3G?

    The device is packaged in a miniature SOT-223 surface mount package.

  7. Is the NVF5P03T3G Pb-Free and RoHS compliant?
  8. What are some typical applications for the NVF5P03T3G?

    Typical applications include DC-DC converters, power management, motor controls, and inductive loads.

  9. What is the gate threshold voltage range of the NVF5P03T3G?

    The gate threshold voltage range is -1.0 to -3.0 V.

  10. Does the NVF5P03T3G have specified avalanche energy?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.56W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NVF5P03T3G
NVF5P03T3G
MOSFET P-CH 30V 3.7A SOT-223

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