Overview
The NVBG160N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi. This device is designed for high-performance applications, particularly in the automotive sector. It features a low on-resistance of 160 mΩ at 20 V and 12 A, making it suitable for efficient power management. The MOSFET is packaged in a D2PAK-7L case, which is compact and thermally efficient. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 1200 | V |
| Gate-to-Source Voltage | VGS | −15/+25 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 19.5 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 13.7 | A |
| Power Dissipation (TJ = 25°C) | PD | 136 | W |
| Power Dissipation (TJ = 100°C) | PD | 68 | W |
| Pulsed Drain Current | IDM | 78 | A |
| Single Pulse Surge Drain Current Capability | IDSC | 140 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance | RDS(on) | 160 mΩ @ 20 V, 12 A | mΩ |
| Total Gate Charge | QG(TOT) | 33.8 nC | nC |
| Thermal Resistance Junction-to-Case | RθJC | 1.1 °C/W | °C/W |
| Thermal Resistance Junction-to-Ambient | RθJA | 40 °C/W | °C/W |
Key Features
- Low On-Resistance: Typical RDS(on) of 160 mΩ at 20 V and 12 A, ensuring high efficiency in power management.
- Ultra Low Gate Charge: Total gate charge (QG(TOT)) of 33.8 nC, facilitating fast switching times.
- Low Effective Output Capacitance: Output capacitance (Coss) of 50.7 pF, reducing switching losses.
- Avalanche Tested: 100% avalanche tested, ensuring robustness against transient conditions.
- AEC-Q101 Qualified and PPAP Capable: Compliant with automotive standards for reliability and quality.
- Halide Free and RoHS Compliant: Environmentally friendly and compliant with RoHS regulations.
Applications
- Automotive On Board Charger: Suitable for high-power charging systems in electric and hybrid vehicles.
- Automotive DC-DC Converter for EV/HEV: Ideal for efficient power conversion in electric and hybrid vehicle applications.
Q & A
- What is the maximum drain-to-source voltage of the NVBG160N120SC1?
The maximum drain-to-source voltage (VDSS) is 1200 V.
- What is the typical on-resistance of the NVBG160N120SC1?
The typical on-resistance (RDS(on)) is 160 mΩ at 20 V and 12 A.
- What is the total gate charge of the NVBG160N120SC1?
The total gate charge (QG(TOT)) is 33.8 nC.
- Is the NVBG160N120SC1 AEC-Q101 qualified?
Yes, the NVBG160N120SC1 is AEC-Q101 qualified and PPAP capable.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 19.5 A.
- What is the thermal resistance junction-to-case of the NVBG160N120SC1?
The thermal resistance junction-to-case (RθJC) is 1.1 °C/W.
- Is the NVBG160N120SC1 RoHS compliant?
Yes, the NVBG160N120SC1 is RoHS compliant with exemption 7a, Pb-free.
- What are the typical applications of the NVBG160N120SC1?
The typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV.
- What is the maximum operating junction temperature of the NVBG160N120SC1?
The maximum operating junction temperature (TJ) is 175°C.
- What is the package type of the NVBG160N120SC1?
The package type is D2PAK-7L.
