NTP6412ANG
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onsemi NTP6412ANG

Manufacturer No:
NTP6412ANG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 58A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NTP6412ANG is a high-performance N-channel power MOSFET designed for a wide range of power management applications. This device is part of onsemi's portfolio of power MOSFETs, known for their reliability and efficiency. The NTP6412ANG is housed in a TO-220AB package, making it suitable for various power electronic systems that require high current and voltage handling capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)58 A
On-Resistance (Rds(on))18.2 mΩ @ 58 A, 10 V
Power Dissipation (Pd)167 W
Threshold Voltage (Vth)4 V @ 250 μA
Package TypeTO-220AB

Key Features

  • High current handling capability of up to 58 A.
  • Low on-resistance of 18.2 mΩ, reducing power losses.
  • High voltage rating of 100 V, suitable for various power management applications.
  • TO-220AB package for easy mounting and heat dissipation.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The onsemi NTP6412ANG is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power management, including inverters and switch-mode power supplies.
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the voltage rating of the NTP6412ANG MOSFET?
    The voltage rating (Vds) of the NTP6412ANG is 100 V.
  2. What is the maximum continuous drain current of the NTP6412ANG?
    The maximum continuous drain current (Id) is 58 A.
  3. What is the on-resistance (Rds(on)) of the NTP6412ANG?
    The on-resistance (Rds(on)) is 18.2 mΩ @ 58 A, 10 V.
  4. In what package is the NTP6412ANG available?
    The NTP6412ANG is available in a TO-220AB package.
  5. Is the NTP6412ANG RoHS compliant?
    Yes, the NTP6412ANG is RoHS compliant.
  6. What are some common applications for the NTP6412ANG?
    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and consumer electronics.
  7. What is the threshold voltage (Vth) of the NTP6412ANG?
    The threshold voltage (Vth) is 4 V @ 250 μA.
  8. How much power can the NTP6412ANG dissipate?
    The NTP6412ANG can dissipate up to 167 W.
  9. Where can I find detailed specifications for the NTP6412ANG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Digi-Key, and LCSC.
  10. Is the NTP6412ANG suitable for high-power electronic systems?
    Yes, the NTP6412ANG is designed for high-power electronic systems due to its high current and voltage handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number NTP6412ANG NTP6410ANG NTP6411ANG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) 76A (Tc) 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 18.2mOhm @ 58A, 10V 13mOhm @ 76A, 10V 14mOhm @ 72A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 120 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 4500 pF @ 25 V 3700 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 167W (Tc) 188W (Tc) 217W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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