Overview
The NTMFS5H600NL, produced by onsemi, is a high-performance power MOSFET designed for a wide range of applications requiring high current handling and low on-resistance. This N-Channel MOSFET features a small footprint in a DFN5 (SO-8FL) package, making it ideal for compact designs. With a maximum drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of up to 250 A, this device is suited for high-power applications. The MOSFET is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 250 | A |
| Continuous Drain Current (TC = 100°C) | ID | 160 | A |
| Power Dissipation (TC = 25°C) | PD | 160 | W |
| Power Dissipation (TC = 100°C) | PD | 63 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
| Source Current (Body Diode) | IS | 170 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 338 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 0.80 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 38 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 1.1 - 1.3 | mΩ |
Key Features
- Small Footprint: The DFN5 (SO-8FL) package offers a compact design, ideal for space-constrained applications.
- Low RDS(on): With a maximum on-resistance of 1.3 mΩ at VGS = 10 V and ID = 50 A, this MOSFET minimizes conduction losses.
- Low QG and Capacitance: Low gate charge and capacitance reduce driver losses, enhancing overall efficiency.
- Environmental Compliance: Pb-free and RoHS compliant, ensuring the device meets environmental standards.
- High Current Handling: Capable of handling up to 250 A of continuous drain current, making it suitable for high-power applications.
Applications
- Power Supplies: Ideal for use in high-power DC-DC converters and power supplies due to its high current and low on-resistance.
- Motor Control: Suitable for motor drive applications requiring high current and efficiency.
- Industrial Automation: Used in various industrial automation systems where high power and reliability are essential.
- Automotive Systems: Applicable in automotive systems that require high current handling and robust performance.
- Renewable Energy Systems: Can be used in solar and wind power systems to optimize energy conversion and efficiency.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5H600NL MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is up to 250 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The typical on-resistance (RDS(on)) is 1.3 mΩ.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 0.80 °C/W.
- Is the NTMFS5H600NL MOSFET RoHS compliant?
Yes, the NTMFS5H600NL MOSFET is Pb-free and RoHS compliant.
- What is the maximum pulse drain current rating?
The maximum pulsed drain current (IDM) is 900 A at 25°C for a pulse duration of 10 μs.
- What is the operating junction temperature range?
The operating junction temperature range is −55 to +150 °C.
- What is the single pulse drain-to-source avalanche energy rating?
The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260 °C.
- What are some typical applications of the NTMFS5H600NL MOSFET?
Typical applications include power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.
