NTMFS5H414NLT1G
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onsemi NTMFS5H414NLT1G

Manufacturer No:
NTMFS5H414NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 35A/210A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTMFS5H414NLT1G is a high-performance, low/medium voltage N-Channel MOSFET manufactured by onsemi. This device is designed to offer superior efficiency and reliability in various power management applications. With its logic level gate drive, it is particularly suited for high-frequency switching and high-current handling.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
ID (Continuous Drain Current)35 A
RDS(ON) (On-Resistance)1.4 mΩ
VGS(TH) (Gate Threshold Voltage)1.5 V to 3.5 V
PackageSO-8FL (5-pin, 4+Tab)
Gate DriveLogic Level

Key Features

  • High-performance N-Channel MOSFET with low on-resistance (RDS(ON)) of 1.4 mΩ.
  • Logic level gate drive for easy interface with microcontrollers and other logic circuits.
  • High continuous drain current (ID) of 35 A.
  • Compact SO-8FL package with 5 pins (4+Tab) for efficient thermal management.
  • Robust and reliable design suitable for high-frequency switching applications.

Applications

The NTMFS5H414NLT1G is ideal for various high-performance power management applications, including:

  • High-performance DC-DC converters.
  • AC-DC synchronous rectifiers.
  • Power supplies and switch-mode power supplies.
  • Motor control and drive systems.
  • High-current and high-frequency switching circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS5H414NLT1G?
    The maximum drain-source voltage is 40 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 35 A.
  3. What is the on-resistance (RDS(ON)) of the NTMFS5H414NLT1G?
    The on-resistance is 1.4 mΩ.
  4. What type of gate drive does this MOSFET require?
    This MOSFET requires a logic level gate drive.
  5. In what package is the NTMFS5H414NLT1G available?
    The NTMFS5H414NLT1G is available in the SO-8FL package (5-pin, 4+Tab).
  6. What are some typical applications for the NTMFS5H414NLT1G?
    Typical applications include high-performance DC-DC converters, AC-DC synchronous rectifiers, power supplies, motor control systems, and high-current/high-frequency switching circuits.
  7. Is the NTMFS5H414NLT1G still in production?
    No, this product is no longer manufactured and will no longer be stocked once current inventory is depleted.
  8. Where can I find detailed specifications for the NTMFS5H414NLT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Arrow Electronics.
  9. What is the significance of the 'Logic Level' gate drive in this MOSFET?
    The 'Logic Level' gate drive allows for easy interface with microcontrollers and other logic circuits, making it convenient for a wide range of applications.
  10. How does the SO-8FL package contribute to the performance of the NTMFS5H414NLT1G?
    The SO-8FL package provides efficient thermal management and a compact footprint, which is beneficial for high-current and high-frequency applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4550 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS5H414NLT1G NTMFS5H419NLT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 210A (Tc) 29A (Ta), 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 20A, 10V 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4550 pF @ 20 V 2900 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 110W (Tc) 3.1W (Ta), 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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