Overview
The NTHS4101PT1G is a P-Channel MOSFET produced by onsemi, designed to offer ultra-low RDS(on) in a compact ChipFET package. This device is optimized for applications where board space is limited, making it ideal for portable electronics. The NTHS4101PT1G features a low profile of less than 1.1 mm, allowing it to fit easily into extremely thin environments. It operates at standard logic level gate drive, simplifying circuit design and facilitating future migration to lower voltage levels.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | -8.0 | Vdc |
| Drain Current - Continuous | ID | -6.7 | A |
| Total Power Dissipation - Continuous @ TA = 25°C | PD | 1.3 | W |
| Pulsed Drain Current - tp = 10 μs | IDM | -190 | A |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Thermal Resistance (Junction-to-Ambient, 5 sec) | RθJA | 50 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS = -4.5 Vdc, ID = -4.8 A | RDS(on) | 21-30 mΩ | mΩ |
Key Features
- Ultra-low RDS(on) solution in the ChipFET package.
- Miniature ChipFET package, 40% smaller footprint than TSOP-6, ideal for applications where board space is at a premium.
- Low profile (<1.1 mm) for use in extremely thin environments such as portable electronics.
- Designed to provide low RDS(on) at gate voltage as low as 1.8 V, simplifying circuit design.
- Operates at standard logic level gate drive, facilitating future migration to lower voltage levels.
- Pb-free package available.
Applications
- Optimized for battery and load management applications in portable equipment such as MP3 players, cell phones, digital cameras, and personal digital assistants.
- Charge control in battery chargers.
- Buck and boost converters.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTHS4101PT1G?
The maximum drain-to-source voltage (VDSS) is -20 Vdc.
- What is the continuous drain current (ID) rating of the NTHS4101PT1G?
The continuous drain current (ID) rating is -6.7 A.
- What is the thermal resistance (RθJA) of the NTHS4101PT1G?
The thermal resistance (RθJA) is 50 °C/W for 5 seconds.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260 °C.
- What are the typical values for static drain-to-source on-resistance (RDS(on))?
The typical values for static drain-to-source on-resistance (RDS(on)) are 21-30 mΩ at VGS = -4.5 Vdc and ID = -4.8 A.
- What are the primary applications of the NTHS4101PT1G?
The primary applications include battery and load management in portable equipment, charge control in battery chargers, and use in buck and boost converters.
- Is the NTHS4101PT1G Pb-free?
- What is the operating junction and storage temperature range of the NTHS4101PT1G?
The operating junction and storage temperature range is -55 to +150 °C.
- What is the typical gate threshold voltage (VGS(th)) of the NTHS4101PT1G?
The typical gate threshold voltage (VGS(th)) is -0.45 to -1.5 Vdc.
- How does the NTHS4101PT1G simplify circuit design?
The NTHS4101PT1G simplifies circuit design by providing low RDS(on) at gate voltages as low as 1.8 V, eliminating the need for additional boost circuits for gate voltages.
