Overview
The NTGS4111PT1G is a power, single, P-Channel MOSFET produced by onsemi. This device is designed using the leading -30 V Trench Process, which ensures low RDS(on) and high efficiency. It is packaged in a surface mount TSOP-6 package, making it suitable for portable applications and saving board space. The NTGS4111PT1G is AEC-Q101 qualified and PPAP capable, making it reliable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | -3.7 A | A |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 200 °C/W | °C/W |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -3.0 V | V |
| Drain-to-Source On Resistance (VGS = -10 V, ID = -3.7 A) | RDS(on) | 38 to 60 mΩ | mΩ |
| Forward Transconductance (VDS = -10 V, ID = -3.7 A) | gFS | 6.0 S | S |
Key Features
- Leading -30 V Trench Process for low RDS(on)
- Low profile TSOP-6 package suitable for portable applications
- Surface mount package saves board space
- Improved efficiency for battery applications
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
- Pb-Free package available
Applications
- Battery management and switching
- Load switching
- Battery protection
Q & A
- What is the maximum drain-to-source voltage of the NTGS4111PT1G?
The maximum drain-to-source voltage (VDSS) is -30 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is -3.7 A at 25°C.
- What is the typical on-resistance of the NTGS4111PT1G?
The typical drain-to-source on resistance (RDS(on)) is 38 to 60 mΩ at VGS = -10 V and ID = -3.7 A.
- Is the NTGS4111PT1G suitable for automotive applications?
- What package type is used for the NTGS4111PT1G?
The device is packaged in a surface mount TSOP-6 package.
- What are the key applications of the NTGS4111PT1G?
The key applications include battery management and switching, load switching, and battery protection.
- Is the NTGS4111PT1G lead-free?
- What is the gate threshold voltage range of the NTGS4111PT1G?
The gate threshold voltage (VGS(TH)) range is -1.0 to -3.0 V.
- What is the forward transconductance of the NTGS4111PT1G?
The forward transconductance (gFS) is 6.0 S at VDS = -10 V and ID = -3.7 A.
- What are the thermal resistance characteristics of the NTGS4111PT1G?
The junction-to-ambient thermal resistance (RθJA) is 200 °C/W in steady state conditions.
