Overview
The NTDV20P06LT4G-VF01 is a P-Channel power MOSFET produced by onsemi. This device is part of the NTD20P06L series and is packaged in a DPAK (TO-252) case. It is designed to handle high-energy applications and is AEC Q101 qualified, ensuring reliability in automotive and other demanding environments. The MOSFET is Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage (Continuous) | VGS | -20 | V |
| Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) | VGSM | -30 | V |
| Drain Current (Steady State, TC = 25°C) | ID | -15.5 | A |
| Power Dissipation (Steady State, TC = 25°C) | PD | 65 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -50 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 304 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 2.3 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State, Note 1) | RθJA | 80 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State, Note 2) | RθJA | 110 | °C/W |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -2.0 | V |
| Drain-to-Source On Resistance | RDS(on) | 0.130 to 0.150 | Ω |
Key Features
- Withstands high energy in avalanche and commutation modes.
- Low gate charge for fast switching.
- AEC Q101 qualified, ensuring reliability in automotive and other demanding environments.
- Pb-free and RoHS compliant.
- High drain current capability of up to -15.5 A.
- Low on-resistance (RDS(on)) of 0.130 to 0.150 Ω.
- High thermal stability with junction-to-case thermal resistance of 2.3 °C/W.
Applications
- Bridge circuits.
- Power supplies.
- Power motor controls.
- DC-DC conversion.
Q & A
- What is the maximum drain-to-source voltage of the NTDV20P06LT4G-VF01 MOSFET?
The maximum drain-to-source voltage is -60 V.
- What is the continuous gate-to-source voltage rating for this MOSFET?
The continuous gate-to-source voltage rating is -20 V.
- What is the maximum steady-state drain current for this device?
The maximum steady-state drain current is -15.5 A at TC = 25°C.
- Is the NTDV20P06LT4G-VF01 MOSFET AEC Q101 qualified?
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance is 0.130 to 0.150 Ω.
- What are the operating junction and storage temperature ranges for this device?
The operating junction and storage temperature ranges are -55 to 175 °C.
- What is the single pulse drain-to-source avalanche energy rating?
The single pulse drain-to-source avalanche energy rating is 304 mJ.
- Is the NTDV20P06LT4G-VF01 Pb-free and RoHS compliant?
- What are some common applications for the NTDV20P06LT4G-VF01 MOSFET?
- What is the junction-to-case thermal resistance of this MOSFET?
The junction-to-case thermal resistance is 2.3 °C/W.
