NTD18N06LT4G
  • Share:

onsemi NTD18N06LT4G

Manufacturer No:
NTD18N06LT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 18A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD18N06LT4G is a power MOSFET produced by onsemi, designed for low voltage, high-speed switching applications. This N-Channel, logic-level MOSFET is housed in a DPAK package and is Pb-Free and RoHS compliant. It is suitable for various power management and control applications, including power supplies, converters, power motor controls, and bridge circuits.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage (VDSS) 60 Vdc
Drain-to-Gate Voltage (VDGR) 60 Vdc
Gate-to-Source Voltage (VGS) ±15 (Continuous), ±20 (Non-repetitive) Vdc
Drain Current (ID) 18 (Continuous @ TA = 25°C), 10 (Continuous @ TA = 100°C), 54 (Single Pulse) A
Total Power Dissipation @ TA = 25°C 55 W W
Operating and Storage Temperature Range -55 to +175 °C °C
Thermal Resistance - Junction-to-Case (RθJC) 2.73 °C/W °C/W
Maximum Lead Temperature for Soldering 260 °C °C
Static Drain-to-Source On-Resistance (RDS(on)) 54 mΩ (Typical @ VGS = 5.0 V, ID = 9.0 A)

Key Features

  • AEC Q101 Qualified for the NTDV18N06L version
  • Pb-Free and RoHS compliant
  • Logic-level gate drive for easy interface with microcontrollers and other logic circuits
  • Low on-resistance (RDS(on)) for reduced power losses
  • High-speed switching capabilities
  • Safe operating area (SOA) for reliable operation in various load conditions
  • Avalanche energy rated for robustness against inductive loads

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits
  • Other high-speed switching applications requiring low voltage and high current handling

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTD18N06LT4G?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 18 A at 25°C and 10 A at 100°C.

  3. Is the NTD18N06LT4G Pb-Free and RoHS compliant?

    Yes, the NTD18N06LT4G is Pb-Free and RoHS compliant.

  4. What are the typical applications of the NTD18N06LT4G?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  5. What is the thermal resistance - junction-to-case (RθJC) of the NTD18N06LT4G?

    The thermal resistance - junction-to-case (RθJC) is 2.73 °C/W.

  6. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260 °C.

  7. What is the static drain-to-source on-resistance (RDS(on)) at VGS = 5.0 V and ID = 9.0 A?

    The static drain-to-source on-resistance (RDS(on)) is typically 54 mΩ.

  8. Is the NTD18N06LT4G suitable for high-speed switching applications?

    Yes, the NTD18N06LT4G is designed for high-speed switching applications.

  9. What is the operating and storage temperature range of the NTD18N06LT4G?

    The operating and storage temperature range is -55 to +175 °C.

  10. Is the NTD18N06LT4G AEC Q101 Qualified?

    The NTDV18N06L version of this MOSFET is AEC Q101 Qualified.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta), 55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.98
767

Please send RFQ , we will respond immediately.

Same Series
NTD18N06LT4
NTD18N06LT4
MOSFET N-CH 60V 18A DPAK
NTD18N06L-001
NTD18N06L-001
MOSFET N-CH 60V 18A IPAK
NTD18N06L
NTD18N06L
MOSFET N-CH 60V 18A DPAK
NTD18N06L-1G
NTD18N06L-1G
MOSFET N-CH 60V 18A IPAK
NTD18N06LG
NTD18N06LG
MOSFET N-CH 60V 18A DPAK
NTDV18N06LT4G
NTDV18N06LT4G
MOSFET N-CH 60V 18A DPAK

Similar Products

Part Number NTD18N06LT4G NTD18N06T4G NTD15N06LT4G NTD18N06LT4
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) 18A (Ta) 15A (Ta) 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V 5V 5V
Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V 60mOhm @ 9A, 10V 100mOhm @ 7.5A, 5V 65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 30 nC @ 10 V 20 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±15V ±20V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 25 V 710 pF @ 25 V 440 pF @ 25 V 675 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.1W (Ta), 55W (Tj) 2.1W (Ta), 55W (Tj) 1.5W (Ta), 48W (Tj) 2.1W (Ta), 55W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD