NTD18N06LT4G
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onsemi NTD18N06LT4G

Manufacturer No:
NTD18N06LT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 18A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD18N06LT4G is a power MOSFET produced by onsemi, designed for low voltage, high-speed switching applications. This N-Channel, logic-level MOSFET is housed in a DPAK package and is Pb-Free and RoHS compliant. It is suitable for various power management and control applications, including power supplies, converters, power motor controls, and bridge circuits.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage (VDSS) 60 Vdc
Drain-to-Gate Voltage (VDGR) 60 Vdc
Gate-to-Source Voltage (VGS) ±15 (Continuous), ±20 (Non-repetitive) Vdc
Drain Current (ID) 18 (Continuous @ TA = 25°C), 10 (Continuous @ TA = 100°C), 54 (Single Pulse) A
Total Power Dissipation @ TA = 25°C 55 W W
Operating and Storage Temperature Range -55 to +175 °C °C
Thermal Resistance - Junction-to-Case (RθJC) 2.73 °C/W °C/W
Maximum Lead Temperature for Soldering 260 °C °C
Static Drain-to-Source On-Resistance (RDS(on)) 54 mΩ (Typical @ VGS = 5.0 V, ID = 9.0 A)

Key Features

  • AEC Q101 Qualified for the NTDV18N06L version
  • Pb-Free and RoHS compliant
  • Logic-level gate drive for easy interface with microcontrollers and other logic circuits
  • Low on-resistance (RDS(on)) for reduced power losses
  • High-speed switching capabilities
  • Safe operating area (SOA) for reliable operation in various load conditions
  • Avalanche energy rated for robustness against inductive loads

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits
  • Other high-speed switching applications requiring low voltage and high current handling

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTD18N06LT4G?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 18 A at 25°C and 10 A at 100°C.

  3. Is the NTD18N06LT4G Pb-Free and RoHS compliant?

    Yes, the NTD18N06LT4G is Pb-Free and RoHS compliant.

  4. What are the typical applications of the NTD18N06LT4G?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  5. What is the thermal resistance - junction-to-case (RθJC) of the NTD18N06LT4G?

    The thermal resistance - junction-to-case (RθJC) is 2.73 °C/W.

  6. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260 °C.

  7. What is the static drain-to-source on-resistance (RDS(on)) at VGS = 5.0 V and ID = 9.0 A?

    The static drain-to-source on-resistance (RDS(on)) is typically 54 mΩ.

  8. Is the NTD18N06LT4G suitable for high-speed switching applications?

    Yes, the NTD18N06LT4G is designed for high-speed switching applications.

  9. What is the operating and storage temperature range of the NTD18N06LT4G?

    The operating and storage temperature range is -55 to +175 °C.

  10. Is the NTD18N06LT4G AEC Q101 Qualified?

    The NTDV18N06L version of this MOSFET is AEC Q101 Qualified.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta), 55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD18N06LT4G NTD18N06T4G NTD15N06LT4G NTD18N06LT4
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) 18A (Ta) 15A (Ta) 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V 5V 5V
Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V 60mOhm @ 9A, 10V 100mOhm @ 7.5A, 5V 65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 30 nC @ 10 V 20 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±15V ±20V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 25 V 710 pF @ 25 V 440 pF @ 25 V 675 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.1W (Ta), 55W (Tj) 2.1W (Ta), 55W (Tj) 1.5W (Ta), 48W (Tj) 2.1W (Ta), 55W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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