NRVB10100MFST1G
  • Share:

onsemi NRVB10100MFST1G

Manufacturer No:
NRVB10100MFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVB10100MFST1G is a SWITCHMODE Power Rectifier produced by onsemi. This device is part of the Schottky barrier rectifier family and is designed for high-efficiency and low power loss applications. Although it is currently discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance. The rectifier is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 10 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 20 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −55 to +175 °C
Instantaneous Forward Voltage (iF = 10 Amps, TJ = 125°C) vF 0.64 V
Thermal Resistance, Junction-to-Case, Steady State RθJC 1.8 °C/W

Key Features

  • Low Power Loss / High Efficiency
  • New Package Provides Capability of Inspection and Probe After Board Mounting
  • Guardring for Stress Protection
  • Low Forward Voltage Drop
  • 175°C Operating Junction Temperature
  • Wettable Flanks Option Available
  • AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • Pb-Free Devices

Applications

The NRVB10100MFST1G is suitable for various high-efficiency and high-reliability applications, including:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for automotive applications requiring high reliability and performance.
  • Power Supplies: Its low forward voltage drop and high efficiency make it a good choice for power supply designs.
  • Switch-Mode Power Supplies: The device is optimized for switch-mode power supplies, offering low power loss and high efficiency.
  • Industrial and Commercial Equipment: It can be used in a variety of industrial and commercial equipment where high reliability and performance are critical.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVB10100MFST1G?

    The peak repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average rectified forward current rating of this device?

    The average rectified forward current (IF(AV)) is 10 A at a case temperature (TC) of 165°C.

  3. What is the maximum operating junction temperature for this rectifier?

    The operating junction temperature (TJ) ranges from −55°C to +175°C.

  4. Is the NRVB10100MFST1G Pb-free?
  5. What is the thermal resistance from junction to case for this device?

    The thermal resistance from junction to case (RθJC) is 1.8°C/W.

  6. What are the storage temperature range and operating junction temperature for this rectifier?

    The storage temperature range (Tstg) is −65°C to +175°C, and the operating junction temperature (TJ) is −55°C to +175°C.

  7. Is the NRVB10100MFST1G suitable for automotive applications?
  8. What is the instantaneous forward voltage at 10 A and 125°C?

    The instantaneous forward voltage (vF) at 10 A and 125°C is 0.64 V.

  9. What is the non-repetitive peak surge current rating for this device?

    The non-repetitive peak surge current (IFSM) is 150 A.

  10. Is the NRVB10100MFST1G still recommended for new designs?

    No, the device is discontinued and not recommended for new designs.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.94
691

Please send RFQ , we will respond immediately.

Same Series
MBR10100MFST3G
MBR10100MFST3G
DIODE SCHOTTKY 100V 10A 5DFN
NRVB10100MFST3G
NRVB10100MFST3G
DIODE SCHOTTKY 100V 10A 5DFN
MBR10100MFST1G
MBR10100MFST1G
DIODE SCHOTTKY 100V 10A 5DFN

Similar Products

Part Number NRVB10100MFST1G NRVB10100MFST3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 10 A 950 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A