MBR10100MFST3G
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onsemi MBR10100MFST3G

Manufacturer No:
MBR10100MFST3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100MFST3G is a SWITCHMODE Power Rectifier produced by onsemi. This device is part of the Schottky Barrier Rectifier family and is designed for high-efficiency and low power loss applications. Although it is currently discontinued and not recommended for new designs, it remains a significant component in existing systems. The rectifier is available in an SO-8 FL (Flat Lead) package and is Pb-free, making it compliant with environmental regulations.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage VRRM / VRWM / VR 100 V
Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 10 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 20 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non-repetitive) EAS 75 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Thermal Resistance, Junction-to-Case, Steady State RθJC 1.8 °C/W
Instantaneous Forward Voltage (iF = 10 Amps, TJ = 125°C) vF 0.64 V

Key Features

  • Low Power Loss / High Efficiency
  • New Package Provides Capability of Inspection and Probe After Board Mounting
  • Guardring for Stress Protection
  • Low Forward Voltage Drop
  • 175°C Operating Junction Temperature
  • Wettable Flanks Option Available
  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free Devices
  • Epoxy Meets Flammability Rating UL 94-0 @ 0.125 in.
  • Lead Finish: 100% Matte Sn (Tin)

Applications

The MBR10100MFST3G is suitable for various high-efficiency and high-reliability applications, including:

  • Switchmode Power Supplies
  • Automotive Systems (AEC-Q101 Qualified)
  • High-Frequency Switching Circuits
  • Rectifier Circuits in Power Conversion Systems
  • General Purpose Rectification in Industrial and Consumer Electronics

Q & A

  1. What is the peak repetitive reverse voltage of the MBR10100MFST3G?

    The peak repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average rectified forward current rating of the MBR10100MFST3G?

    The average rectified forward current (IF(AV)) is 10 A at a case temperature (TC) of 165°C.

  3. What is the operating junction temperature range of the MBR10100MFST3G?

    The operating junction temperature (TJ) range is from -55°C to +175°C.

  4. Is the MBR10100MFST3G Pb-free?
  5. What is the thermal resistance, junction-to-case, of the MBR10100MFST3G?

    The thermal resistance, junction-to-case (RθJC), is 1.8 °C/W.

  6. What is the instantaneous forward voltage of the MBR10100MFST3G at 10 A and 125°C?

    The instantaneous forward voltage (vF) at 10 A and 125°C is 0.64 V.

  7. Is the MBR10100MFST3G suitable for automotive applications?
  8. What is the storage temperature range for the MBR10100MFST3G?

    The storage temperature range (Tstg) is from -65°C to +175°C.

  9. What is the ESD rating of the MBR10100MFST3G according to the Human Body Model?

    The ESD rating according to the Human Body Model is 3B.

  10. Why is the MBR10100MFST3G not recommended for new designs?

    The MBR10100MFST3G is discontinued and not recommended for new designs. Users should contact their onsemi representative for information on current alternatives.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
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Same Series
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MBR10100MFST3G
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NRVB10100MFST3G
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Similar Products

Part Number MBR10100MFST3G MBR10100MFST1G
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 10 A 950 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

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