MBR10100MFST1G
  • Share:

onsemi MBR10100MFST1G

Manufacturer No:
MBR10100MFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 10A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100MFST1G is a high-performance Schottky barrier rectifier manufactured by ON Semiconductor. This device is designed for switchmode power rectification applications, offering low power loss and high efficiency. It features a 100V, 10A rating, making it suitable for a wide range of power management and rectification needs. The MBR10100MFST1G is packaged in an 8-PowerTDFN, 5-lead configuration, which provides excellent thermal performance and ease of inspection after board mounting.

Key Specifications

Parameter Value Unit
Current 10 A
Mounting Type Surface Mount
Operating Temperature -55°C to 175°C
Package 8-PowerTDFN, 5 Leads
Speed Fast Recovery < 500ns, > 200mA (Io)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Technology Schottky
Voltage 950 mV @ 10 A
Peak Repetitive Reverse Voltage 100 V
Average Rectified Forward Current 10 A
Peak Forward Surge Current 150 A
Storage Temperature Range -65°C to +175°C
Thermal Resistance, Junction-to-Case 1.8 °C/W

Key Features

  • Low Power Loss / High Efficiency: Optimized for high-efficiency applications, reducing energy losses.
  • New Package Design: Allows for inspection and probe after board mounting, enhancing manufacturing flexibility.
  • Guardring for Stress Protection: Provides enhanced protection against electrical stress.
  • Low Forward Voltage Drop: Minimizes voltage drop, ensuring efficient operation.
  • High Operating Junction Temperature: Operates up to 175°C, suitable for demanding environments.
  • Wettable Flanks Option Available: Enhances solderability and reliability.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
  • Pb-Free Devices: Compliant with environmental regulations.

Applications

  • Switchmode Power Supplies: Ideal for high-frequency switching applications.
  • Power Rectification: Suitable for rectifying AC to DC in various power systems.
  • Automotive Systems: Meets the stringent requirements of automotive applications due to AEC-Q101 qualification.
  • Industrial Power Management: Used in industrial power supplies, motor drives, and other high-power applications.

Q & A

  1. What is the maximum current rating of the MBR10100MFST1G?

    The maximum current rating is 10A.

  2. What is the operating temperature range of the MBR10100MFST1G?

    The operating temperature range is -55°C to 175°C.

  3. What type of package does the MBR10100MFST1G use?

    The device is packaged in an 8-PowerTDFN, 5-lead configuration.

  4. What is the peak repetitive reverse voltage of the MBR10100MFST1G?

    The peak repetitive reverse voltage is 100V.

  5. Is the MBR10100MFST1G Pb-free?
  6. What are the key features of the MBR10100MFST1G?

    The key features include low power loss, high efficiency, new package design for inspection, guardring for stress protection, low forward voltage drop, and high operating junction temperature.

  7. What are the typical applications of the MBR10100MFST1G?

    The device is typically used in switchmode power supplies, power rectification, automotive systems, and industrial power management.

  8. What is the thermal resistance of the MBR10100MFST1G from junction to case?

    The thermal resistance from junction to case is 1.8°C/W.

  9. Is the MBR10100MFST1G AEC-Q101 qualified?
  10. What is the maximum forward surge current of the MBR10100MFST1G?

    The maximum forward surge current is 150A.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
307

Please send RFQ , we will respond immediately.

Same Series
NRVB10100MFST1G
NRVB10100MFST1G
DIODE SCHOTTKY 100V 10A 5DFN
MBR10100MFST3G
MBR10100MFST3G
DIODE SCHOTTKY 100V 10A 5DFN
NRVB10100MFST3G
NRVB10100MFST3G
DIODE SCHOTTKY 100V 10A 5DFN

Similar Products

Part Number MBR10100MFST1G MBR10100MFST3G
Manufacturer onsemi onsemi
Product Status Obsolete Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 10 A 950 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD