Overview
The NDS331N is an N-Channel logic level enhancement mode power field effect transistor produced by ON Semiconductor. It utilizes ON Semiconductor's proprietary, high cell density, DMOS technology, which is tailored to minimize on-state resistance. This transistor is particularly suited for low voltage applications in devices such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are essential.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 20 | V |
| Gate-Source Voltage (VGSS) | ±8 | V |
| Maximum Drain Current (ID) - Continuous | 1.3 | A |
| Maximum Drain Current (ID) - Pulsed | 10 | A |
| Maximum Power Dissipation (PD) | 0.5 / 0.46 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| On-State Resistance (RDS(ON)) @ VGS = 2.7 V | 0.21 | Ω |
| On-State Resistance (RDS(ON)) @ VGS = 4.5 V | 0.16 | Ω |
| Total Gate Charge (Qg) @ VGS = 4.5 V | 3.5 | nC |
| Rise Time (tr) | 25 | ns |
| Output Capacitance (Coss) | 85 | pF |
| Package Type | SOT-23-3 / SuperSOT-3 |
Key Features
- High cell density DMOS technology for extremely low on-state resistance (RDS(ON)).
- Industry standard SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities.
- Exceptional on-resistance and maximum DC current capability.
- Suitable for low voltage applications requiring fast switching and low in-line power loss.
- Pb-free and compliant with RoHS Directive 2002/95/EC.
Applications
- Notebook computers.
- Portable phones.
- PCMCIA cards.
- Other battery-powered circuits.
Q & A
- What is the maximum drain-source voltage of the NDS331N?
The maximum drain-source voltage (VDSS) is 20 V.
- What is the maximum continuous drain current of the NDS331N?
The maximum continuous drain current (ID) is 1.3 A.
- What is the on-state resistance (RDS(ON)) at VGS = 4.5 V?
The on-state resistance (RDS(ON)) at VGS = 4.5 V is 0.16 Ω.
- What is the maximum power dissipation of the NDS331N?
The maximum power dissipation (PD) is 0.5 W (or 0.46 W under specific conditions).
- What is the operating temperature range of the NDS331N?
The operating and storage temperature range is -55 to +150 °C.
- What package type does the NDS331N use?
The NDS331N uses an SOT-23-3 / SuperSOT-3 surface mount package.
- Is the NDS331N Pb-free and RoHS compliant?
- What are some typical applications for the NDS331N?
Typical applications include notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.
- What is the total gate charge (Qg) at VGS = 4.5 V?
The total gate charge (Qg) at VGS = 4.5 V is 3.5 nC.
- What is the rise time (tr) of the NDS331N?
The rise time (tr) is 25 ns.
