Overview
The NDS0605-F169 is a P-Channel enhancement mode power field effect transistor produced by onsemi. This device is fabricated using onsemi's proprietary, high cell density, DMOS technology. This technology is designed to minimize on-state resistance, provide rugged and reliable performance, and enable fast switching. The NDS0605-F169 is suitable for low voltage applications requiring a low current high side switch and can handle continuous drain currents up to 180 mA and pulsed currents up to 1 A.
Key Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | onsemi |
| Technology | MOSFET (Metal Oxide) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Vgs (Max) | ±20V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 360mW (Ta) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 79 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
Key Features
- Voltage controlled P-Channel small signal switch.
- High density cell design for extremely low RDS(on).
- High saturation current.
- RDS(on) = 5 Ω @ VGS = -10 V.
- Pb-Free, Halide Free, and RoHS compliant.
Applications
The NDS0605-F169 is generally suitable for many different applications, particularly in low voltage scenarios requiring a low current high side switch. It is commonly used in various electronic circuits where a reliable and efficient P-Channel MOSFET is needed.
Q & A
- What is the maximum drain-source voltage (Vdss) of the NDS0605-F169?
The maximum drain-source voltage (Vdss) is 60 V.
- What is the continuous drain current (Id) rating at 25°C for the NDS0605-F169?
The continuous drain current (Id) rating at 25°C is 180 mA.
- What is the maximum power dissipation of the NDS0605-F169?
The maximum power dissipation is 360 mW (Ta).
- What is the package type of the NDS0605-F169?
The package type is TO-236-3, SC-59, SOT-23-3.
- What is the gate threshold voltage (Vgs(th)) of the NDS0605-F169?
The gate threshold voltage (Vgs(th)) is 3 V @ 250 µA.
- Is the NDS0605-F169 RoHS compliant?
Yes, the NDS0605-F169 is Pb-Free, Halide Free, and RoHS compliant.
- What is the operating temperature range of the NDS0605-F169?
The operating temperature range is -55°C to 150°C (TJ).
- What is the typical input capacitance (Ciss) of the NDS0605-F169?
The typical input capacitance (Ciss) is 79 pF @ 25 V.
- What is the gate charge (Qg) of the NDS0605-F169?
The gate charge (Qg) is 2.5 nC @ 10 V.
- Can the NDS0605-F169 handle pulsed currents?
Yes, the NDS0605-F169 can deliver pulsed currents up to 1 A.
