MMBT2222AHLT1H
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onsemi MMBT2222AHLT1H

Manufacturer No:
MMBT2222AHLT1H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222ALT1G is a NPN Silicon General Purpose Transistor manufactured by onsemi. It is designed for use in linear and switching applications and is housed in the compact SOT-23 package. This transistor is widely used in various electronic circuits for amplification, switching, and signal processing due to its high frequency capabilities and versatility.

Key Specifications

AttributeValueUnit
PolarityNPN
Collector-Base Voltage (VCBO)75V
Collector-Emitter Voltage (VCEO)40V
Emitter-Base Voltage (VEBO)6V
Collector Current Max (IC)600mA
Power Dissipation-Tot225mW
Transition Frequency (fT)250MHz
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount

Key Features

  • Pb-free packages available
  • AEC-Q101 qualified and PPAP capable
  • S prefix for automotive and other applications requiring unique site and control change requirements
  • High current gain (hFE) for high amplification capabilities in signal circuits
  • Low saturation voltage ensuring minimal voltage drop when the transistor is fully on
  • Fast switching speed suitable for high-frequency applications
  • Compact SOT-23 package ideal for space-constrained designs
  • Low cost, making it economical for various electronic applications

Applications

The MMBT2222ALT1G is well-suited for a variety of applications, including linear and switching circuits. It is commonly used in amplification, switching, and signal processing due to its high gain and fast switching capabilities. This transistor is particularly useful in low-power applications that require high-frequency performance.

Q & A

  1. What is the maximum collector current of the MMBT2222ALT1G?
    The maximum collector current is 600 mA.
  2. What is the maximum collector-emitter voltage of the MMBT2222ALT1G?
    The maximum collector-emitter voltage is 40 V.
  3. What is the package style of the MMBT2222ALT1G?
    The package style is SOT-23 (SC-59, TO-236).
  4. What is the mounting method of the MMBT2222ALT1G?
    The mounting method is surface mount.
  5. Is the MMBT2222ALT1G AEC-Q101 qualified?
    Yes, the MMBT2222ALT1G is AEC-Q101 qualified and PPAP capable.
  6. What is the transition frequency of the MMBT2222ALT1G?
    The transition frequency is 250 MHz.
  7. Is the MMBT2222ALT1G Pb-free?
    Yes, Pb-free packages are available.
  8. What are some common applications of the MMBT2222ALT1G?
    Common applications include amplification, switching, and signal processing in low-power and high-frequency circuits.
  9. What is the power dissipation of the MMBT2222ALT1G?
    The total power dissipation is 225 mW.
  10. Is the MMBT2222ALT1G suitable for automotive applications?
    Yes, it has an S prefix for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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