Overview
The MJE350G is a 0.5A PNP bipolar power transistor manufactured by onsemi. It is designed for use in line-operated applications, such as low-power, line-operated series pass and switching regulators that require PNP capability. This transistor is part of the general-purpose MJxxxx series and is known for its high collector-emitter breakdown voltage, making it suitable for various industrial and power management applications.
Key Specifications
Parameter | Value | Units |
---|---|---|
Collector-Base Voltage (VCBO) | 300 | V |
Collector-Emitter Voltage (VCEO) | 300 | V |
Emitter-Base Voltage (VEBO) | 5 | V |
Collector Current (IC) | 500 | mA |
Collector Dissipation (PC) | 20 | W |
Junction Temperature (TJ) | 150 | °C |
Storage Temperature (TSTG) | -65 to 150 | °C |
DC Current Gain (hFE) | 30 to 240 | |
Package Type | TO-225AA | |
Pins | 3 |
Key Features
- High collector-emitter breakdown voltage of 300V, making it suitable for high-voltage applications.
- Collector current of 500 mA and collector dissipation of 20 W.
- DC current gain (hFE) ranges from 30 to 240.
- Housed in the TO-225AA package with through-hole mounting.
- Complement to the MJE340 transistor.
Applications
The MJE350G is primarily used in industrial and power management applications, including:
- Low-power, line-operated series pass and switching regulators.
- General-purpose amplifier applications.
- Transformer and other high-voltage applications.
Q & A
- What is the collector-emitter breakdown voltage of the MJE350G transistor?
The collector-emitter breakdown voltage of the MJE350G transistor is 300V. - What is the maximum collector current of the MJE350G transistor?
The maximum collector current is 500 mA. - What is the maximum collector dissipation of the MJE350G transistor?
The maximum collector dissipation is 20 W. - What is the junction temperature range of the MJE350G transistor?
The junction temperature range is up to 150°C. - What package type is the MJE350G transistor housed in?
The MJE350G transistor is housed in the TO-225AA package. - What are the primary applications of the MJE350G transistor?
The primary applications include low-power, line-operated series pass and switching regulators, and general-purpose amplifier applications. - Is the MJE350G transistor suitable for high-voltage applications?
Yes, the MJE350G transistor is suitable for high-voltage applications due to its high collector-emitter breakdown voltage. - What is the DC current gain range of the MJE350G transistor?
The DC current gain (hFE) ranges from 30 to 240. - Can the MJE350G transistor be used in life support systems or medical devices?
No, the MJE350G transistor is not designed or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices. - What is the storage temperature range for the MJE350G transistor?
The storage temperature range is from -65°C to 150°C.