MJE350G
  • Share:

onsemi MJE350G

Manufacturer No:
MJE350G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 300V 0.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE350G is a 0.5A PNP bipolar power transistor manufactured by onsemi. It is designed for use in line-operated applications, such as low-power, line-operated series pass and switching regulators that require PNP capability. This transistor is part of the general-purpose MJxxxx series and is known for its high collector-emitter breakdown voltage, making it suitable for various industrial and power management applications.

Key Specifications

ParameterValueUnits
Collector-Base Voltage (VCBO)300V
Collector-Emitter Voltage (VCEO)300V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)500mA
Collector Dissipation (PC)20W
Junction Temperature (TJ)150°C
Storage Temperature (TSTG)-65 to 150°C
DC Current Gain (hFE)30 to 240
Package TypeTO-225AA
Pins3

Key Features

  • High collector-emitter breakdown voltage of 300V, making it suitable for high-voltage applications.
  • Collector current of 500 mA and collector dissipation of 20 W.
  • DC current gain (hFE) ranges from 30 to 240.
  • Housed in the TO-225AA package with through-hole mounting.
  • Complement to the MJE340 transistor.

Applications

The MJE350G is primarily used in industrial and power management applications, including:

  • Low-power, line-operated series pass and switching regulators.
  • General-purpose amplifier applications.
  • Transformer and other high-voltage applications.

Q & A

  1. What is the collector-emitter breakdown voltage of the MJE350G transistor?
    The collector-emitter breakdown voltage of the MJE350G transistor is 300V.
  2. What is the maximum collector current of the MJE350G transistor?
    The maximum collector current is 500 mA.
  3. What is the maximum collector dissipation of the MJE350G transistor?
    The maximum collector dissipation is 20 W.
  4. What is the junction temperature range of the MJE350G transistor?
    The junction temperature range is up to 150°C.
  5. What package type is the MJE350G transistor housed in?
    The MJE350G transistor is housed in the TO-225AA package.
  6. What are the primary applications of the MJE350G transistor?
    The primary applications include low-power, line-operated series pass and switching regulators, and general-purpose amplifier applications.
  7. Is the MJE350G transistor suitable for high-voltage applications?
    Yes, the MJE350G transistor is suitable for high-voltage applications due to its high collector-emitter breakdown voltage.
  8. What is the DC current gain range of the MJE350G transistor?
    The DC current gain (hFE) ranges from 30 to 240.
  9. Can the MJE350G transistor be used in life support systems or medical devices?
    No, the MJE350G transistor is not designed or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
  10. What is the storage temperature range for the MJE350G transistor?
    The storage temperature range is from -65°C to 150°C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

$0.77
396

Please send RFQ , we will respond immediately.

Similar Products

Part Number MJE350G MJE340G MJE350
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Active Active
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20 W 20 W 20.8 W
Frequency - Transition - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 SOT-32-3

Related Product By Categories

BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP