MJE340G
  • Share:

onsemi MJE340G

Manufacturer No:
MJE340G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 300V 0.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE340G is a medium-power NPN silicon transistor manufactured by onsemi. This device is designed for high-voltage general-purpose applications and is particularly suitable for transformerless, line-operated equipment. It features a high power dissipation rating, which enhances its reliability. The transistor is available in a Pb-free package, making it compliant with RoHS standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 300 Vdc
Emitter-Base Voltage VEB 3.0 Vdc
Collector Current - Continuous IC 500 mAdc
Total Power Dissipation @ TC = 25°C PD 20 W
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C
Thermal Resistance, Junction-to-Case θJC 6.25 °C/W
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) hFE 30 - 240
Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO – 100 μAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO – 100 μAdc

Key Features

  • Suitable for transformerless, line-operated equipment.
  • High power dissipation rating for high reliability.
  • Pb-free package, RoHS compliant.
  • Complementary to MJE350.
  • High collector-emitter voltage rating of 300 Vdc.
  • Continuous collector current of 500 mAdc.

Applications

The MJE340G transistor is versatile and can be used in various high-voltage general-purpose applications, including:

  • Transformerless, line-operated equipment.
  • Power amplifiers and switching circuits.
  • High-reliability power systems.
  • Industrial control and automation.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE340G transistor?

    The maximum collector-emitter voltage (VCEO) is 300 Vdc.

  2. What is the continuous collector current rating of the MJE340G?

    The continuous collector current (IC) is 500 mAdc.

  3. Is the MJE340G transistor Pb-free and RoHS compliant?
  4. What is the thermal resistance, junction-to-case (θJC) of the MJE340G?

    The thermal resistance, junction-to-case (θJC) is 6.25 °C/W.

  5. What is the DC current gain (hFE) range of the MJE340G transistor?

    The DC current gain (hFE) ranges from 30 to 240 at IC = 50 mAdc and VCE = 10 Vdc.

  6. What are the operating and storage junction temperature ranges for the MJE340G?

    The operating and storage junction temperature ranges are –65 to +150 °C.

  7. What type of package does the MJE340G transistor come in?

    The MJE340G transistor comes in a TO-225 package.

  8. Is the MJE340G suitable for high-reliability applications?
  9. What are some common applications of the MJE340G transistor?
  10. Is the MJE340G transistor complementary to any other transistor model?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

$0.63
531

Please send RFQ , we will respond immediately.

Similar Products

Part Number MJE340G MJE350G MJE344G MJE340
Manufacturer onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Obsolete Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 200 V 300 V
Vce Saturation (Max) @ Ib, Ic - - 1V @ 5mA, 50mA -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO) 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20 W 20 W 20 W 20 W
Frequency - Transition - - 15MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD