MJE340G
  • Share:

onsemi MJE340G

Manufacturer No:
MJE340G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 300V 0.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE340G is a medium-power NPN silicon transistor manufactured by onsemi. This device is designed for high-voltage general-purpose applications and is particularly suitable for transformerless, line-operated equipment. It features a high power dissipation rating, which enhances its reliability. The transistor is available in a Pb-free package, making it compliant with RoHS standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 300 Vdc
Emitter-Base Voltage VEB 3.0 Vdc
Collector Current - Continuous IC 500 mAdc
Total Power Dissipation @ TC = 25°C PD 20 W
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C
Thermal Resistance, Junction-to-Case θJC 6.25 °C/W
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) hFE 30 - 240
Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO – 100 μAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO – 100 μAdc

Key Features

  • Suitable for transformerless, line-operated equipment.
  • High power dissipation rating for high reliability.
  • Pb-free package, RoHS compliant.
  • Complementary to MJE350.
  • High collector-emitter voltage rating of 300 Vdc.
  • Continuous collector current of 500 mAdc.

Applications

The MJE340G transistor is versatile and can be used in various high-voltage general-purpose applications, including:

  • Transformerless, line-operated equipment.
  • Power amplifiers and switching circuits.
  • High-reliability power systems.
  • Industrial control and automation.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE340G transistor?

    The maximum collector-emitter voltage (VCEO) is 300 Vdc.

  2. What is the continuous collector current rating of the MJE340G?

    The continuous collector current (IC) is 500 mAdc.

  3. Is the MJE340G transistor Pb-free and RoHS compliant?
  4. What is the thermal resistance, junction-to-case (θJC) of the MJE340G?

    The thermal resistance, junction-to-case (θJC) is 6.25 °C/W.

  5. What is the DC current gain (hFE) range of the MJE340G transistor?

    The DC current gain (hFE) ranges from 30 to 240 at IC = 50 mAdc and VCE = 10 Vdc.

  6. What are the operating and storage junction temperature ranges for the MJE340G?

    The operating and storage junction temperature ranges are –65 to +150 °C.

  7. What type of package does the MJE340G transistor come in?

    The MJE340G transistor comes in a TO-225 package.

  8. Is the MJE340G suitable for high-reliability applications?
  9. What are some common applications of the MJE340G transistor?
  10. Is the MJE340G transistor complementary to any other transistor model?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

$0.63
531

Please send RFQ , we will respond immediately.

Similar Products

Part Number MJE340G MJE350G MJE344G MJE340
Manufacturer onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Obsolete Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 200 V 300 V
Vce Saturation (Max) @ Ib, Ic - - 1V @ 5mA, 50mA -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO) 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20 W 20 W 20 W 20 W
Frequency - Transition - - 15MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BFS20
BFS20
Diotec Semiconductor
TRANS NPN 20V 0.025A SOT23-3
2PD601ARL,235
2PD601ARL,235
Nexperia USA Inc.
TRANS NPN 50V 0.1A TO236AB
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP