MJD45H11TF-ON
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onsemi MJD45H11TF-ON

Manufacturer No:
MJD45H11TF-ON
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 80V 8A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD45H11TF-ON, produced by onsemi, is a PNP medium power transistor designed for general-purpose power and switching applications. This transistor is part of the MJD45H11 series and is packaged in a DPAK (TO252) surface mount package. It is electrically similar to the popular D45H series and is known for its low collector-emitter saturation voltage and fast switching speeds.

The MJD45H11TF-ON is RoHS compliant, lead-free, and halogen-free, making it an environmentally friendly option. It is also AEC-Q101 qualified, which makes it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -80 Vdc
Emitter-Base Voltage VEBO -5 Vdc
Continuous Collector Current IC -8 A
Peak Pulse Collector Current ICM -16 A
Total Power Dissipation @ TA = 25°C PD 2.7 W
Thermal Resistance, Junction to Ambient Air RθJA 46 °C/W
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C
Collector-Emitter Saturation Voltage VCE(sat) -1 Vdc
Base-Emitter Saturation Voltage VBE(sat) -1.5 Vdc

Key Features

  • Low collector-emitter saturation voltage (VCE(sat) = -1 Vdc)
  • Fast switching speeds
  • Complementary pairs simplify designs (NPN: MJD44H11)
  • Lead formed for surface mount application in plastic sleeves
  • RoHS compliant, lead-free, and halogen-free
  • AEC-Q101 qualified and PPAP capable for automotive applications
  • Epoxy meets UL 94 V-0 @ 0.125 in

Applications

  • Output or driver stages in switching regulators, converters, and power amplifiers
  • Power switching or amplification applications
  • Automotive and other applications requiring unique site and control change requirements

Q & A

  1. What is the maximum collector-emitter voltage for the MJD45H11TF-ON?

    The maximum collector-emitter voltage (VCEO) is -80 Vdc.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) is -8 A.

  3. What is the peak pulse collector current rating?

    The peak pulse collector current (ICM) is -16 A.

  4. Is the MJD45H11TF-ON RoHS compliant?
  5. What is the thermal resistance, junction to ambient air, for this transistor?

    The thermal resistance, junction to ambient air (RθJA), is 46 °C/W.

  6. What are the operating and storage junction temperature ranges?

    The operating and storage junction temperature range is -55 to +150 °C.

  7. Is the MJD45H11TF-ON suitable for automotive applications?
  8. What is the collector-emitter saturation voltage for this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -1 Vdc.

  9. What is the base-emitter saturation voltage for this transistor?

    The base-emitter saturation voltage (VBE(sat)) is -1.5 Vdc.

  10. What package type is the MJD45H11TF-ON available in?

    The MJD45H11TF-ON is available in a DPAK (TO252) surface mount package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:40MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252-3
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