Overview
The MJ11033G is a PNP Darlington Bipolar Power Transistor manufactured by onsemi. This transistor is designed for use as an output device in complementary general-purpose amplifier applications. It features high DC current gain, making it suitable for a variety of power amplification tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 120 | Vdc |
| Collector-Base Voltage (VCBO) | 120 | Vdc |
| Emitter-Base Voltage (VEB0) | 5.0 | Vdc |
| Continuous Collector Current (IC) | 50 | A |
| Pulsed Collector Current | 100 | A |
| Continuous Base Current (IB) | 2.0 | A |
| Total Power Dissipation (PD) at TC = 25°C | 300 | W |
| Junction Temperature Range | -55 to +200 | °C |
| DC Current Gain (hFE) at IC = 25 A | 1000 (Min) | |
| DC Current Gain (hFE) at IC = 50 A | 400 (Min) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 | Vdc |
| Base-Emitter Saturation Voltage (VBE(sat)) | 3.0 | Vdc |
| Package Type | TO-204 (TO-3) |
Key Features
- High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A, hFE = 400 (Min) @ IC = 50 A
- Pulsed Collector Current up to 100 A
- Diode Protection to Rated IC
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- Junction Temperature up to +200°C
- Pb-Free Packages Available
Applications
The MJ11033G is suitable for use in various power amplification and switching applications, including:
- Complementary general-purpose amplifier applications
- High-current output devices in power amplifiers and switching circuits
- Industrial and automotive systems requiring high current handling and reliability
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MJ11033G?
The maximum collector-emitter voltage (VCEO) is 120 Vdc.
- What is the continuous collector current (IC) rating of the MJ11033G?
The continuous collector current (IC) rating is 50 A.
- What is the DC current gain (hFE) of the MJ11033G at IC = 25 A?
The DC current gain (hFE) at IC = 25 A is 1000 (Min).
- What is the junction temperature range of the MJ11033G?
The junction temperature range is -55 to +200°C.
- Does the MJ11033G have Pb-Free packages available?
- What is the package type of the MJ11033G?
The package type is TO-204 (TO-3).
- What is the collector-emitter saturation voltage (VCE(sat)) of the MJ11033G?
The collector-emitter saturation voltage (VCE(sat)) is 2.5 Vdc.
- What is the base-emitter saturation voltage (VBE(sat)) of the MJ11033G?
The base-emitter saturation voltage (VBE(sat)) is 3.0 Vdc.
- What are the typical applications of the MJ11033G?
The MJ11033G is typically used in complementary general-purpose amplifier applications, high-current output devices in power amplifiers, and switching circuits.
- Is the MJ11033G suitable for high-temperature environments?
