Overview
The MJ11032G is a high-current complementary silicon power transistor produced by onsemi. This NPN Darlington transistor is designed for use as an output device in general-purpose amplifier applications. It features a monolithic construction with a built-in base-emitter shunt resistor, providing high reliability and performance.
The transistor is available in a TO-204 (TO-3) package and is Pb-free, making it compliant with current environmental standards. It is suitable for a wide range of applications requiring high current and voltage handling capabilities.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 120 | Vdc |
| Collector-Base Voltage | VCBO | 120 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 50 | A |
| Base Current - Continuous | IB | 2.0 | A |
| Total Power Dissipation @ TC = 25°C | PD | 300 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +200 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | 0.58 | °C/W |
| DC Current Gain (IC = 25 A, VCE = 5 V) | hFE | 1000 (Min) | |
| Collector-Emitter Saturation Voltage (IC = 25 A, IB = 250 mA) | VCE(sat) | 2.5 | Vdc |
Key Features
- High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A, hFE = 400 (Min) @ IC = 50 A
- High Current Handling: Up to 50 A continuous collector current
- High Voltage Handling: Up to 120 V collector-emitter voltage
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- Junction Temperature up to +200°C
- Pb-Free Packages Available
- Diode Protection to Rated IC
- High Power Dissipation: 300 W at TC = 25°C
Applications
- General Purpose Amplifier Applications
- High-Current Switching and Amplification
- Power Supplies and Power Management Systems
- Motor Control and Drive Systems
- Audio and Power Amplifiers
Q & A
- What is the maximum collector-emitter voltage of the MJ11032G transistor?
The maximum collector-emitter voltage (VCEO) of the MJ11032G transistor is 120 Vdc.
- What is the continuous collector current rating of the MJ11032G?
The continuous collector current (IC) rating of the MJ11032G is 50 A.
- What is the thermal resistance, junction-to-case (RθJC) of the MJ11032G?
The thermal resistance, junction-to-case (RθJC) of the MJ11032G is 0.58 °C/W.
- What is the operating and storage junction temperature range for the MJ11032G?
The operating and storage junction temperature range for the MJ11032G is -55 to +200 °C.
- Is the MJ11032G transistor Pb-free?
- What is the DC current gain (hFE) of the MJ11032G at IC = 25 A?
The DC current gain (hFE) of the MJ11032G at IC = 25 A is 1000 (Min).
- What is the collector-emitter saturation voltage (VCE(sat)) of the MJ11032G?
The collector-emitter saturation voltage (VCE(sat)) of the MJ11032G at IC = 25 A and IB = 250 mA is 2.5 Vdc.
- In what package is the MJ11032G transistor available?
The MJ11032G transistor is available in a TO-204 (TO-3) package.
- What are some typical applications of the MJ11032G transistor?
The MJ11032G transistor is typically used in general-purpose amplifier applications, high-current switching and amplification, power supplies, motor control, and audio and power amplifiers.
- What is the total power dissipation rating of the MJ11032G at TC = 25°C?
The total power dissipation rating of the MJ11032G at TC = 25°C is 300 W.
