KSC3503DSTU
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onsemi KSC3503DSTU

Manufacturer No:
KSC3503DSTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 300V 0.1A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSC3503DSTU is an NPN Epitaxial Silicon Transistor produced by onsemi. This transistor is designed for general-purpose applications and is notable for its high voltage and low distortion characteristics. It is packaged in a TO-126-3LD (Pb-Free) case, making it suitable for a variety of electronic circuits. The device is RoHS compliant and available in both bulk box and tube packaging options.

Key Specifications

Parameter Symbol Ratings Units
Collector-Base Voltage BVCBO 300 V
Collector-Emitter Voltage BVCEO 300 V
Emitter-Base Voltage BVEBO 5 V
Collector Current (DC) IC 100 mA
Collector Current (Pulse) ICP 200 mA
Total Device Dissipation (TC = 25°C) PC 7 W
Total Device Dissipation (TC = 125°C) PC 1.2 W
Junction and Storage Temperature TJ, TSTG −50 ~ +150 °C
Thermal Resistance, Junction to Case RθJC 17.8 °C/W
DC Current Gain hFE 60 ~ 120
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V
Base-Emitter Saturation Voltage VBE(sat) 1 V
Current Gain Bandwidth Product fT 150 MHz
Output Capacitance Cob 1.8 pF

Key Features

  • High Voltage Capability: The KSC3503DSTU has a collector-emitter voltage (VCEO) and collector-base voltage (BVCBO) of 300 V, making it suitable for high-voltage applications.
  • Low Reverse Transfer Capacitance: With a low reverse transfer capacitance (Cre) of 1.8 pF at VCB = 30 V, this transistor minimizes signal distortion.
  • Excellent Gain Linearity: It offers excellent gain linearity, which is crucial for low Total Harmonic Distortion (THD) in audio and other applications.
  • High Frequency Operation: The transistor has a high frequency capability with a current gain bandwidth product (fT) of 150 MHz.
  • Full Thermal and Electrical Spice Models: Available Spice models facilitate detailed simulation and design.
  • RoHS Compliance: The device is lead-free and RoHS compliant, ensuring environmental sustainability.
  • Complement to KSA1381/2SA1381: It serves as a complement to the KSA1381 and 2SA1381 transistors, offering flexibility in circuit design.

Applications

  • Audio Amplifiers and Current Sources: Suitable for audio amplification and current source applications due to its high gain linearity and low distortion.
  • CRT Display and Video Output: Used in CRT display and video output circuits where high voltage and low distortion are critical.
  • General Purpose Amplifiers: Ideal for general-purpose amplifier applications requiring high voltage and reliability.

Q & A

  1. What is the collector-emitter voltage rating of the KSC3503DSTU?

    The collector-emitter voltage (VCEO) rating is 300 V.

  2. What is the maximum collector current for the KSC3503DSTU?

    The maximum DC collector current (IC) is 100 mA, and the maximum pulse collector current (ICP) is 200 mA.

  3. What is the thermal resistance of the KSC3503DSTU?

    The thermal resistance from junction to case (RθJC) is 17.8 °C/W.

  4. Is the KSC3503DSTU RoHS compliant?

    Yes, the KSC3503DSTU is lead-free and RoHS compliant.

  5. What is the current gain bandwidth product of the KSC3503DSTU?

    The current gain bandwidth product (fT) is 150 MHz.

  6. What are the typical applications of the KSC3503DSTU?

    Typical applications include audio amplifiers, CRT display and video output, and general-purpose amplifiers.

  7. What is the output capacitance of the KSC3503DSTU?

    The output capacitance (Cob) is 1.8 pF at VCB = 30 V.

  8. Does the KSC3503DSTU have Spice models available?

    Yes, full thermal and electrical Spice models are available for the KSC3503DSTU.

  9. What is the package type of the KSC3503DSTU?

    The KSC3503DSTU is packaged in a TO-126-3LD (Pb-Free) case.

  10. What is the complement transistor to the KSC3503DSTU?

    The KSC3503DSTU is a complement to the KSA1381 and 2SA1381 transistors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 2mA, 20mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 10V
Power - Max:7 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number KSC3503DSTU KSC3503ESTU
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 10V 100 @ 10mA, 10V
Power - Max 7 W 7 W
Frequency - Transition 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3

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