FQP85N06
  • Share:

onsemi FQP85N06

Manufacturer No:
FQP85N06
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 85A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQP85N06 is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which enhances its performance and reliability. The FQP85N06 is designed to provide high efficiency and low on-resistance, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)85 A
RDS(on) (On-Resistance)6.5 mΩ (Typical at VGS = 10 V)
PD (Power Dissipation)150 W
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • Low On-Resistance: 6.5 mΩ (Typical at VGS = 10 V)
  • High Current Capability: 85 A Continuous Drain Current
  • High Voltage Rating: 60 V Drain-Source Voltage
  • Enhancement Mode Operation
  • Planar Stripe and DMOS Technology for Improved Performance

Applications

  • Power Supplies and DC-DC Converters
  • Motor Control and Drive Systems
  • Switching Regulators
  • Automotive Systems
  • Industrial Power Management

Q & A

  1. What is the maximum drain-source voltage of the FQP85N06?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance of the FQP85N06?
    The typical on-resistance (RDS(on)) is 6.5 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the FQP85N06?
    The continuous drain current (ID) is 85 A.
  4. What technology is used to fabricate the FQP85N06?
    The FQP85N06 is fabricated using onsemi's proprietary planar stripe and DMOS technology.
  5. What is the junction temperature range of the FQP85N06?
    The junction temperature range is -55°C to 150°C.
  6. Is the FQP85N06 still in production?
    No, the FQP85N06 is no longer manufactured and is considered obsolete.
  7. What are some common applications for the FQP85N06?
    Common applications include power supplies, DC-DC converters, motor control systems, switching regulators, and automotive systems.
  8. What is the maximum power dissipation of the FQP85N06?
    The maximum power dissipation (PD) is 150 W.
  9. What is the gate-source voltage rating of the FQP85N06?
    The gate-source voltage (VGS) rating is ±20 V.
  10. Where can I find detailed specifications for the FQP85N06?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 42.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.93
171

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP85N06 FQP55N06 FQP65N06
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Last Time Buy Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc) 55A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 42.5A, 10V 20mOhm @ 27.5A, 10V 16mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V 46 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4120 pF @ 25 V 1690 pF @ 25 V 2410 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 160W (Tc) 133W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5