FQP85N06
  • Share:

onsemi FQP85N06

Manufacturer No:
FQP85N06
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 85A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQP85N06 is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which enhances its performance and reliability. The FQP85N06 is designed to provide high efficiency and low on-resistance, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)85 A
RDS(on) (On-Resistance)6.5 mΩ (Typical at VGS = 10 V)
PD (Power Dissipation)150 W
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • Low On-Resistance: 6.5 mΩ (Typical at VGS = 10 V)
  • High Current Capability: 85 A Continuous Drain Current
  • High Voltage Rating: 60 V Drain-Source Voltage
  • Enhancement Mode Operation
  • Planar Stripe and DMOS Technology for Improved Performance

Applications

  • Power Supplies and DC-DC Converters
  • Motor Control and Drive Systems
  • Switching Regulators
  • Automotive Systems
  • Industrial Power Management

Q & A

  1. What is the maximum drain-source voltage of the FQP85N06?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance of the FQP85N06?
    The typical on-resistance (RDS(on)) is 6.5 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the FQP85N06?
    The continuous drain current (ID) is 85 A.
  4. What technology is used to fabricate the FQP85N06?
    The FQP85N06 is fabricated using onsemi's proprietary planar stripe and DMOS technology.
  5. What is the junction temperature range of the FQP85N06?
    The junction temperature range is -55°C to 150°C.
  6. Is the FQP85N06 still in production?
    No, the FQP85N06 is no longer manufactured and is considered obsolete.
  7. What are some common applications for the FQP85N06?
    Common applications include power supplies, DC-DC converters, motor control systems, switching regulators, and automotive systems.
  8. What is the maximum power dissipation of the FQP85N06?
    The maximum power dissipation (PD) is 150 W.
  9. What is the gate-source voltage rating of the FQP85N06?
    The gate-source voltage (VGS) rating is ±20 V.
  10. Where can I find detailed specifications for the FQP85N06?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 42.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.93
171

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP85N06 FQP55N06 FQP65N06
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Last Time Buy Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc) 55A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 42.5A, 10V 20mOhm @ 27.5A, 10V 16mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V 46 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4120 pF @ 25 V 1690 pF @ 25 V 2410 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 160W (Tc) 133W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN