FQD3P50TM
  • Share:

onsemi FQD3P50TM

Manufacturer No:
FQD3P50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 2.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD3P50TM is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is particularly suited for applications requiring high efficiency and reliability in power management.

Key Specifications

Attribute Value Unit
FET Type P-Channel
Drain-to-Source Voltage (Vdss) 500 V
Drain-Source On Resistance (RDS(on)) 4.9 Ω
Rated Power Dissipation 2.5 W
Gate Charge (Qg) 23 nC
Package Style TO-252-3 (DPAK)
Mounting Method Surface Mount
Thermal Resistance, Junction-to-Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W

Key Features

  • -2.1 A, -500 V, RDS(on) = 4.9 Ω @ VGS = -10 V, ID = -1.05 A
  • Low gate charge (typical 18 nC)
  • Low Crss (typical 9.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Rohs Compliant

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Low voltage applications
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the drain-to-source voltage rating of the FQD3P50TM MOSFET?

    The drain-to-source voltage rating is 500 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of the FQD3P50TM?

    The maximum RDS(on) is 4.9 Ω at VGS = -10 V and ID = -1.05 A.

  3. What is the typical gate charge (Qg) of the FQD3P50TM?

    The typical gate charge is 18 nC.

  4. Is the FQD3P50TM RoHS compliant?
  5. What are the common applications of the FQD3P50TM MOSFET?
  6. What is the package style and mounting method of the FQD3P50TM?

    The package style is TO-252-3 (DPAK) and the mounting method is surface mount.

  7. What is the thermal resistance, junction-to-case (RθJC) of the FQD3P50TM?

    The thermal resistance, junction-to-case (RθJC) is 2.5 °C/W.

  8. Is the FQD3P50TM 100% avalanche tested?
  9. What is the maximum continuous drain current rating of the FQD3P50TM?

    The maximum continuous drain current rating is -2.1 A.

  10. What is the typical Crss (output capacitance) of the FQD3P50TM?

    The typical Crss is 9.5 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.45
602

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD3P50TM FQD1P50TM FQD3P20TM FQD3P50TF
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 200 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 1.2A (Tc) 2.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.05A, 10V 10.5Ohm @ 600mA, 10V 2.7Ohm @ 1.2A, 10V 4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 14 nC @ 10 V 8 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 350 pF @ 25 V 250 pF @ 25 V 660 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP