FQD3P50TM
  • Share:

onsemi FQD3P50TM

Manufacturer No:
FQD3P50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 2.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD3P50TM is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is particularly suited for applications requiring high efficiency and reliability in power management.

Key Specifications

Attribute Value Unit
FET Type P-Channel
Drain-to-Source Voltage (Vdss) 500 V
Drain-Source On Resistance (RDS(on)) 4.9 Ω
Rated Power Dissipation 2.5 W
Gate Charge (Qg) 23 nC
Package Style TO-252-3 (DPAK)
Mounting Method Surface Mount
Thermal Resistance, Junction-to-Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W

Key Features

  • -2.1 A, -500 V, RDS(on) = 4.9 Ω @ VGS = -10 V, ID = -1.05 A
  • Low gate charge (typical 18 nC)
  • Low Crss (typical 9.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Rohs Compliant

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Low voltage applications
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the drain-to-source voltage rating of the FQD3P50TM MOSFET?

    The drain-to-source voltage rating is 500 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of the FQD3P50TM?

    The maximum RDS(on) is 4.9 Ω at VGS = -10 V and ID = -1.05 A.

  3. What is the typical gate charge (Qg) of the FQD3P50TM?

    The typical gate charge is 18 nC.

  4. Is the FQD3P50TM RoHS compliant?
  5. What are the common applications of the FQD3P50TM MOSFET?
  6. What is the package style and mounting method of the FQD3P50TM?

    The package style is TO-252-3 (DPAK) and the mounting method is surface mount.

  7. What is the thermal resistance, junction-to-case (RθJC) of the FQD3P50TM?

    The thermal resistance, junction-to-case (RθJC) is 2.5 °C/W.

  8. Is the FQD3P50TM 100% avalanche tested?
  9. What is the maximum continuous drain current rating of the FQD3P50TM?

    The maximum continuous drain current rating is -2.1 A.

  10. What is the typical Crss (output capacitance) of the FQD3P50TM?

    The typical Crss is 9.5 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.45
602

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD3P50TM FQD1P50TM FQD3P20TM FQD3P50TF
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 200 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 1.2A (Tc) 2.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.05A, 10V 10.5Ohm @ 600mA, 10V 2.7Ohm @ 1.2A, 10V 4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 14 nC @ 10 V 8 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 350 pF @ 25 V 250 pF @ 25 V 660 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5