FQD3P50TM
  • Share:

onsemi FQD3P50TM

Manufacturer No:
FQD3P50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 2.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD3P50TM is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is particularly suited for applications requiring high efficiency and reliability in power management.

Key Specifications

Attribute Value Unit
FET Type P-Channel
Drain-to-Source Voltage (Vdss) 500 V
Drain-Source On Resistance (RDS(on)) 4.9 Ω
Rated Power Dissipation 2.5 W
Gate Charge (Qg) 23 nC
Package Style TO-252-3 (DPAK)
Mounting Method Surface Mount
Thermal Resistance, Junction-to-Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W

Key Features

  • -2.1 A, -500 V, RDS(on) = 4.9 Ω @ VGS = -10 V, ID = -1.05 A
  • Low gate charge (typical 18 nC)
  • Low Crss (typical 9.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Rohs Compliant

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Low voltage applications
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the drain-to-source voltage rating of the FQD3P50TM MOSFET?

    The drain-to-source voltage rating is 500 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of the FQD3P50TM?

    The maximum RDS(on) is 4.9 Ω at VGS = -10 V and ID = -1.05 A.

  3. What is the typical gate charge (Qg) of the FQD3P50TM?

    The typical gate charge is 18 nC.

  4. Is the FQD3P50TM RoHS compliant?
  5. What are the common applications of the FQD3P50TM MOSFET?
  6. What is the package style and mounting method of the FQD3P50TM?

    The package style is TO-252-3 (DPAK) and the mounting method is surface mount.

  7. What is the thermal resistance, junction-to-case (RθJC) of the FQD3P50TM?

    The thermal resistance, junction-to-case (RθJC) is 2.5 °C/W.

  8. Is the FQD3P50TM 100% avalanche tested?
  9. What is the maximum continuous drain current rating of the FQD3P50TM?

    The maximum continuous drain current rating is -2.1 A.

  10. What is the typical Crss (output capacitance) of the FQD3P50TM?

    The typical Crss is 9.5 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.45
602

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD3P50TM FQD1P50TM FQD3P20TM FQD3P50TF
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 200 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 1.2A (Tc) 2.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.05A, 10V 10.5Ohm @ 600mA, 10V 2.7Ohm @ 1.2A, 10V 4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 14 nC @ 10 V 8 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 350 pF @ 25 V 250 pF @ 25 V 660 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD