FFSD0665B
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onsemi FFSD0665B

Manufacturer No:
FFSD0665B
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
650V 6A SIC SBD GEN1.5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSD0665B is a Silicon Carbide (SiC) Schottky Diode produced by onsemi, part of their EliteSiC series. This diode leverages advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon-based diodes. It is designed to provide high efficiency, faster operating frequencies, increased power density, reduced EMI, and a smaller system size and cost. The FFSD0665B is particularly suited for applications requiring high power handling and efficient switching characteristics.

Key Specifications

ParameterSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM650V
Single Pulse Avalanche EnergyEAS24.5mJ
Continuous Rectified Forward Current (TC < 154°C)IF6.0A
Non-Repetitive Peak Forward Surge Current (TC = 25°C, tP = 10 μs)IFM493A
Non-Repetitive Forward Surge Current (Half-Sine Pulse, TC = 25°C, tP = 8.3 ms)IFSM28A
Power Dissipation (TC = 25°C)Ptot75W
Operating Junction and Storage Temperature RangeTJ, Tstg−55 to +175°C
Thermal Resistance, Junction-to-CaseRJC2.0°C/W
Forward Voltage (IF = 6.0 A, TJ = 25°C)VF1.38 - 1.7V
Reverse Current (VR = 650 V, TJ = 25°C)IR0.5 - 40μA

Key Features

  • No reverse recovery current and no forward recovery
  • Temperature-independent switching characteristics
  • High surge current capacity
  • Positive temperature coefficient
  • Ease of paralleling
  • Pb-free, halogen-free, and RoHS compliant
  • Max junction temperature of 175°C
  • Avalanche rated with 24.5 mJ single pulse avalanche energy

Applications

  • General purpose rectification
  • Switch Mode Power Supplies (SMPS)
  • Solar inverters
  • Uninterruptible Power Supplies (UPS)
  • Power switching circuits

Q & A

  1. What is the peak repetitive reverse voltage of the FFSD0665B?
    The peak repetitive reverse voltage is 650 V.
  2. What is the maximum junction temperature of the FFSD0665B?
    The maximum junction temperature is 175°C.
  3. Does the FFSD0665B have reverse recovery current?
    No, the FFSD0665B does not have reverse recovery current.
  4. What is the continuous rectified forward current of the FFSD0665B at TC < 154°C?
    The continuous rectified forward current is 6.0 A.
  5. Is the FFSD0665B RoHS compliant?
    Yes, the FFSD0665B is Pb-free, halogen-free, and RoHS compliant.
  6. What are the typical applications of the FFSD0665B?
    The FFSD0665B is used in SMPS, solar inverters, UPS, and power switching circuits.
  7. What is the thermal resistance, junction-to-case, of the FFSD0665B?
    The thermal resistance, junction-to-case, is 2.0 °C/W.
  8. What is the single pulse avalanche energy of the FFSD0665B?
    The single pulse avalanche energy is 24.5 mJ.
  9. Does the FFSD0665B support high surge current capacity?
    Yes, the FFSD0665B has high surge current capacity.
  10. What is the forward voltage of the FFSD0665B at IF = 6.0 A and TJ = 25°C?
    The forward voltage is 1.38 - 1.7 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9.1A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:259pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSD0665B FFSD0865B FFSM0665B FFSP0665B FFSB0665B FFSD0665A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 9.1A (DC) 11.6A (DC) 9.1A (DC) 8A (DC) 8A (DC) 11A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A 1.7 V @ 8 A 1.7 V @ 6 A 1.7 V @ 6 A 1.7 V @ 6 A 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns - 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 259pF @ 1V, 100kHz 336pF @ 1V, 100kHz 259pF @ 1V, 100kHz 259pF @ 1V, 100kHz 259pF @ 1V, 100kHz 361pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 4-PowerTSFN TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) 4-PQFN (8x8) TO-220-2 D²PAK-2 (TO-263-2) D-PAK (TO-252)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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