Overview
The FFSD0865B is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode utilizes advanced SiC technology, offering superior switching performance and higher reliability compared to traditional silicon diodes. It is designed to provide high efficiency, faster operating frequencies, increased power density, reduced electromagnetic interference (EMI), and a smaller system size and cost. The FFSD0865B is particularly suited for applications requiring high power handling and efficient switching characteristics.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 650 | V |
| Single Pulse Avalanche Energy | EAS | 33 | mJ |
| Continuous Rectified Forward Current | IF | 8.0 A (TC < 153°C), 11.6 A (TC < 135°C) | A |
| Non-Repetitive Peak Forward Surge Current | IFM | 577 A (TC = 25°C, tP = 10 μs), 538 A (TC = 150°C, tP = 10 μs) | A |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse) | IFSM | 42 A (TC = 25°C, tP = 8.3 ms) | A |
| Power Dissipation | Ptot | 91 W (TC = 25°C), 15 W (TC = 150°C) | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 1.64 | °C/W |
| Forward Voltage | VF | 1.39 - 1.7 V (IF = 8.0 A, TJ = 25°C), 1.55 - 2.0 V (IF = 8.0 A, TJ = 125°C), 1.71 - 2.4 V (IF = 8.0 A, TJ = 175°C) | V |
| Reverse Current | IR | 0.5 - 40 μA (VR = 650 V, TJ = 25°C), 1.0 - 80 μA (VR = 650 V, TJ = 125°C), 2.0 - 160 μA (VR = 650 V, TJ = 175°C) | μA |
Key Features
- No reverse recovery current and no forward recovery, enhancing switching performance.
- Temperature-independent switching characteristics.
- High surge current capacity.
- Positive temperature coefficient.
- Ease of paralleling.
- Pb-free, halogen-free, and RoHS compliant.
- Max junction temperature of 175°C.
- Avalanche rated with 33 mJ single pulse avalanche energy.
- Excellent thermal performance.
Applications
- General purpose rectification.
- Switch-Mode Power Supplies (SMPS).
- Solar inverters.
- Uninterruptible Power Supplies (UPS).
- Power switching circuits.
Q & A
- What is the peak repetitive reverse voltage of the FFSD0865B?
The peak repetitive reverse voltage (VRRM) is 650 V.
- What is the maximum junction temperature of the FFSD0865B?
The maximum junction temperature (TJ) is 175°C.
- What are the key benefits of using Silicon Carbide (SiC) technology in the FFSD0865B?
The key benefits include superior switching performance, higher reliability, higher efficiency, faster operating frequencies, increased power density, reduced EMI, and smaller system size and cost.
- Is the FFSD0865B RoHS compliant?
Yes, the FFSD0865B is Pb-free, halogen-free, and RoHS compliant.
- What are some typical applications for the FFSD0865B?
Typical applications include general purpose rectification, SMPS, solar inverters, UPS, and power switching circuits.
- What is the thermal resistance, junction-to-case (RJC) of the FFSD0865B?
The thermal resistance, junction-to-case (RJC) is 1.64 °C/W.
- Does the FFSD0865B have any reverse recovery current?
No, the FFSD0865B has no reverse recovery current and no forward recovery.
- What is the continuous rectified forward current rating of the FFSD0865B?
The continuous rectified forward current (IF) is 8.0 A (TC < 153°C) and 11.6 A (TC < 135°C).
- What is the single pulse avalanche energy rating of the FFSD0865B?
The single pulse avalanche energy (EAS) is 33 mJ.
- What is the package type of the FFSD0865B?
The package type is DPAK (TO-252AA).
