FFSD0665A
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onsemi FFSD0665A

Manufacturer No:
FFSD0665A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 650V 11A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSD0665A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode utilizes advanced SiC technology, offering superior switching performance and higher reliability compared to traditional silicon diodes. It is designed to provide no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features make it an ideal component for next-generation power semiconductor applications, enabling higher efficiency, faster operating frequencies, increased power density, reduced EMI, and smaller system sizes and costs.

Key Specifications

Parameter Value
VRRM (Maximum Reverse Voltage) 650 V
IF(AVE) (Average Forward Current) 6 A
VF (Forward Voltage Drop) 1.75 V @ 6 A
IFSM (Surge Forward Current) 42 A
IR (Maximum Reverse Current) 200 µA
TJ (Maximum Junction Temperature) 175 °C
Package Type DPAK-3 / TO-252-3
Compliance Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Key Features

  • No reverse recovery current and no forward recovery
  • Temperature-independent switching characteristics
  • Excellent thermal performance
  • High surge current capacity
  • Positive temperature coefficient
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Telecommunication systems
  • Cloud systems
  • Industrial power systems
  • Telecom power supplies
  • Server power supplies
  • UPS (Uninterruptible Power Supplies) and ESS (Energy Storage Systems)
  • Solar power systems

Q & A

  1. What is the maximum reverse voltage of the FFSD0665A?

    The maximum reverse voltage (VRRM) of the FFSD0665A is 650 V.

  2. What is the average forward current rating of the FFSD0665A?

    The average forward current (IF(AVE)) of the FFSD0665A is 6 A.

  3. What is the forward voltage drop of the FFSD0665A at 6 A?

    The forward voltage drop (VF) of the FFSD0665A at 6 A is 1.75 V.

  4. What is the maximum junction temperature of the FFSD0665A?

    The maximum junction temperature (TJ) of the FFSD0665A is 175 °C.

  5. Is the FFSD0665A RoHS compliant?

    Yes, the FFSD0665A is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.

  6. What are the key benefits of using SiC technology in the FFSD0665A?

    The key benefits include superior switching performance, higher reliability, no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance.

  7. What types of applications is the FFSD0665A suitable for?

    The FFSD0665A is suitable for telecommunication systems, cloud systems, industrial power systems, telecom power supplies, server power supplies, UPS and ESS, and solar power systems.

  8. What is the package type of the FFSD0665A?

    The package type of the FFSD0665A is DPAK-3 / TO-252-3.

  9. Does the FFSD0665A have high surge current capacity?

    Yes, the FFSD0665A has high surge current capacity.

  10. What is the typical forward current rating for the FFSD0665A in terms of surge current?

    The surge forward current (IFSM) of the FFSD0665A is 42 A.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):11A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:361pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSD0665A FFSD0665B FFSP0665A FFSD0865A FFSM0665A FFSB0665A FFSD0465A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 11A (DC) 9.1A (DC) 8.8A (DC) 15A (DC) 8A (DC) 9A (DC) 7.6A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 6 A 1.7 V @ 6 A 1.75 V @ 6 A 1.75 V @ 8 A 1.75 V @ 6 A 1.75 V @ 6 A 1.75 V @ 4 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 361pF @ 1V, 100kHz 259pF @ 1V, 100kHz 361pF @ 1V, 100kHz 463pF @ 1V, 100kHz 365pF @ 1V, 100kHz 361pF @ 1V, 100kHz 258pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 4-PowerTSFN TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) TO-220-2L D-PAK (TO-252) 4-PQFN (8x8) D²PAK-3 (TO-263-3) D-PAK (TO-252)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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