FDWS86380-F085
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onsemi FDWS86380-F085

Manufacturer No:
FDWS86380-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 50A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDWS86380-F085 is an N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power efficiency and reliability. With a drain-to-source voltage (VDSS) of 80 V and a maximum drain current (ID) of 50 A, this MOSFET is suitable for a wide range of power management and control systems.

Key Specifications

Parameter Symbol Typical Value Maximum Value Unit
Drain-to-Source Breakdown Voltage BVDSS - 80 V
Drain-to-Source On-Resistance RDS(on) 11.3 mΩ 13.4 mΩ
Gate-to-Source Threshold Voltage VGS(th) 3.0 V 4.0 V V
Total Gate Charge Qg(tot) 20 nC 30 nC nC
Input Capacitance Ciss 1440 pF - pF
Output Capacitance Coss 300 pF - pF
Reverse Transfer Capacitance Crss 14 pF - pF
Turn-On Time ton - 31 ns ns
Turn-Off Time toff - 30 ns ns

Key Features

  • Low On-Resistance: Typical RDS(on) of 11.3 mΩ at VGS = 10 V and ID = 50 A, ensuring minimal power loss.
  • UIS Capability: The device is capable of withstanding unclamped inductive switching, enhancing reliability in harsh environments.
  • Wettable Flanks: Designed for automatic optical inspection (AOI), facilitating quality control and manufacturing efficiency.
  • AEC-Q101 Qualified and PPAP Capable: Meets stringent automotive standards for reliability and performance.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.

Applications

  • Automotive Engine Control: Suitable for engine management systems due to its high reliability and performance.
  • PowerTrain Management: Used in powertrain control systems for efficient power distribution.
  • Solenoid and Motor Drivers: Ideal for driving solenoids and motors in various automotive and industrial applications.
  • Electronic Steering: Applied in electronic steering systems for precise control.
  • Integrated Starter/Alternator: Used in integrated starter/alternator systems for improved efficiency.
  • Distributed Power Architectures and VRM: Suitable for distributed power architectures and voltage regulator modules (VRM).
  • Primary Switch for 12 V Systems: Often used as the primary switch in 12 V automotive systems.

Q & A

  1. What is the maximum drain-to-source voltage of the FDWS86380-F085 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 80 V.

  2. What is the typical on-resistance of the FDWS86380-F085 at VGS = 10 V and ID = 50 A?

    The typical on-resistance (RDS(on)) is 11.3 mΩ.

  3. Is the FDWS86380-F085 AEC-Q101 qualified?

    Yes, the FDWS86380-F085 is AEC-Q101 qualified and PPAP capable.

  4. What are the typical applications of the FDWS86380-F085 MOSFET?

    It is used in automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, and as a primary switch for 12 V systems.

  5. Is the FDWS86380-F085 environmentally friendly?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What is the total gate charge of the FDWS86380-F085?

    The total gate charge (Qg(tot)) is typically 20 nC at VGS = 10 V and ID = 50 A.

  7. What is the turn-on time of the FDWS86380-F085?

    The turn-on time (ton) is typically 31 ns.

  8. What is the turn-off time of the FDWS86380-F085?

    The turn-off time (toff) is typically 30 ns.

  9. Does the FDWS86380-F085 support automatic optical inspection (AOI)?

    Yes, it has wettable flanks for AOI.

  10. What is the gate-to-source threshold voltage of the FDWS86380-F085?

    The gate-to-source threshold voltage (VGS(th)) is typically 3.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
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