FDT86246L
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onsemi FDT86246L

Manufacturer No:
FDT86246L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 2A SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The FDT86246L is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This MOSFET is designed to offer high performance and efficiency in various power management applications. It features a drain to source voltage (Vdss) of 150 V, a continuous drain current (Id) of 2 A, and a low on-resistance (Rds(on)) of 228 mΩ. The device is packaged in a SOT-223-4 surface mount configuration, making it suitable for a wide range of electronic systems that require reliable and efficient power switching.

Key Specifications

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) 2 A
On-Resistance (Rds(on)) 228
Package Type SOT-223-4
Power Dissipation (Pd) 1 W

Key Features

  • Advanced PowerTrench® process for optimized Rds(on) and switching performance.
  • Low on-resistance (Rds(on)) of 228 mΩ, reducing power losses.
  • High drain to source voltage (Vdss) of 150 V, suitable for high-voltage applications.
  • Continuous drain current (Id) of 2 A, supporting moderate to high current requirements.
  • SOT-223-4 surface mount package for easy integration into various electronic systems.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-efficiency power management in consumer electronics.
  • Industrial control and automation systems.
  • Automotive systems requiring reliable and efficient power switching.

Q & A

  1. What is the drain to source voltage (Vdss) of the FDT86246L MOSFET?

    The drain to source voltage (Vdss) of the FDT86246L MOSFET is 150 V.

  2. What is the continuous drain current (Id) of the FDT86246L?

    The continuous drain current (Id) of the FDT86246L is 2 A.

  3. What is the on-resistance (Rds(on)) of the FDT86246L?

    The on-resistance (Rds(on)) of the FDT86246L is 228 mΩ.

  4. What package type is the FDT86246L available in?

    The FDT86246L is available in a SOT-223-4 surface mount package.

  5. What is the power dissipation (Pd) of the FDT86246L?

    The power dissipation (Pd) of the FDT86246L is 1 W.

  6. What process is used to manufacture the FDT86246L?

    The FDT86246L is manufactured using the advanced PowerTrench® process.

  7. What are some common applications of the FDT86246L?

    The FDT86246L is commonly used in power supplies, DC-DC converters, motor control systems, and high-efficiency power management in consumer electronics.

  8. Is the FDT86246L suitable for high-voltage applications?

    Yes, the FDT86246L is suitable for high-voltage applications due to its 150 V drain to source voltage rating.

  9. What are the benefits of using the PowerTrench® process in the FDT86246L?

    The PowerTrench® process optimizes Rds(on) and switching performance, reducing power losses and improving overall efficiency.

  10. Where can I purchase the FDT86246L?

    The FDT86246L can be purchased from various electronic component distributors such as Digi-Key, Mouser, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:228mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:335 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FDT86246L FDT86246
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 228mOhm @ 2A, 10V 236mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 335 pF @ 75 V 215 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 2.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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