FDT439N
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onsemi FDT439N

Manufacturer No:
FDT439N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 6.3A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDT439N is an N-Channel enhancement mode power field effect transistor produced by onsemi using their proprietary, high cell density DMOS technology. This technology is designed to minimize on-state resistance and provide superior switching performance, making it suitable for low voltage, low current applications. The transistor is housed in a widely used SOT-223 surface mount package, enhancing its versatility in various electronic designs.

Key Specifications

Parameter Unit Min Typ Max
Drain-Source Voltage (VDSS) V - - 30
Gate-Source Voltage (VGSS) V - - ±8
Continuous Drain Current (ID) A - - 6.3
Pulsed Drain Current (ID) A - - 20
Power Dissipation (PD) W - - 3
Operating and Storage Junction Temperature Range (TJ, Tstg) °C -55 - 150
Thermal Resistance, Junction-to-Ambient (RθJA) °C/W - - 42
Thermal Resistance, Junction-to-Case (RθJC) °C/W - - 12
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5V Ω 0.038 0.045 0.055
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 2.5V Ω 0.048 0.058 0.072

Key Features

  • High cell density DMOS technology for low on-state resistance and superior switching performance.
  • Fast switching speed.
  • High power and current handling capability in a SOT-223 surface mount package.
  • Pb-Free package.
  • Low voltage, low current operation suitable for applications such as notebook computer power management, battery-powered circuits, and DC motor control.

Applications

  • DC/DC Converters.
  • Load Switches.
  • Motor Driving.
  • Notebook computer power management.
  • Battery-powered circuits.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDT439N?

    The maximum drain-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current (ID) rating of the FDT439N?

    The continuous drain current (ID) rating is 6.3 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDT439N?

    The thermal resistance, junction-to-ambient (RθJA), is 42 °C/W.

  4. What are the typical applications of the FDT439N?

    The FDT439N is typically used in DC/DC converters, load switches, motor driving, notebook computer power management, and battery-powered circuits.

  5. What is the gate-source voltage (VGSS) rating of the FDT439N?

    The gate-source voltage (VGSS) rating is ±8 V.

  6. What is the static drain-source on-resistance (RDS(on)) at VGS = 4.5V?

    The static drain-source on-resistance (RDS(on)) at VGS = 4.5V is typically 0.045 Ω.

  7. Is the FDT439N Pb-Free?
  8. What is the operating and storage junction temperature range of the FDT439N?

    The operating and storage junction temperature range is -55°C to 150°C.

  9. What package type is the FDT439N available in?

    The FDT439N is available in a SOT-223 surface mount package.

  10. What is the maximum power dissipation (PD) of the FDT439N?

    The maximum power dissipation (PD) is 3 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:45mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FDT439N FDT459N
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 6.3A, 4.5V 35mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 17 nC @ 10 V
Vgs (Max) ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 15 V 365 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 3W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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