FDS6673BZ-F085
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onsemi FDS6673BZ-F085

Manufacturer No:
FDS6673BZ-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 14.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS6673BZ-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to offer high performance and reliability in various power management applications. Although it is currently listed as obsolete and no longer manufactured, it remains an important component in existing designs and legacy systems.

Key Specifications

ParameterValue
VDS (Max)-30 V
ID (Max) at Ta-14.5 A
RDS(on) at VGS = -10 V, ID = -14.5 A7.8 mΩ
RDS(on) at VGS = -4.5 V, ID = -12 A12 mΩ
VGS Range-25 V to 20 V
Package8-SOIC

Key Features

  • P-Channel PowerTrench® MOSFET technology for high performance and low on-resistance.
  • Extended VGS range of -25 V, making it suitable for battery applications.
  • High current handling capability with a maximum drain current of -14.5 A.
  • Low on-resistance (RDS(on)) of 7.8 mΩ at VGS = -10 V, ID = -14.5 A.

Applications

The FDS6673BZ-F085 is suitable for a variety of power management applications, including but not limited to:

  • Battery management systems due to its extended VGS range.
  • Power supplies and DC-DC converters where high current handling and low on-resistance are critical.
  • Motor control and drive systems requiring high performance and reliability.
  • General purpose power switching in industrial and consumer electronics.

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the FDS6673BZ-F085? The maximum drain-to-source voltage is -30 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)? The maximum drain current at ambient temperature is -14.5 A.
  3. What is the on-resistance (RDS(on)) at VGS = -10 V and ID = -14.5 A? The on-resistance is 7.8 mΩ.
  4. What is the package type of the FDS6673BZ-F085? The package type is 8-SOIC.
  5. Is the FDS6673BZ-F085 still in production? No, the FDS6673BZ-F085 is listed as obsolete and no longer manufactured.
  6. What is the extended VGS range of the FDS6673BZ-F085? The extended VGS range is -25 V to 20 V.
  7. What are some typical applications for the FDS6673BZ-F085? Typical applications include battery management systems, power supplies, motor control, and general purpose power switching.
  8. What is the significance of the PowerTrench® technology in the FDS6673BZ-F085? The PowerTrench® technology provides high performance and low on-resistance, making it suitable for high-current applications.
  9. Can the FDS6673BZ-F085 be used in high-temperature environments? While it can handle various temperatures, specific temperature ratings should be consulted from the datasheet for precise details.
  10. Where can I find substitutes for the FDS6673BZ-F085? Substitutes can be found on the Digi-Key website or other electronic component distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.8mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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