FDS2582
  • Share:

onsemi FDS2582

Manufacturer No:
FDS2582
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 4.1A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS2582 is a small signal N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is part of the POWERTRENCH® family and is designed for high-performance applications. It offers a combination of low on-resistance, high current capability, and robust thermal performance, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Input Capacitance1.29 nF
Drain-Source Voltage (Vds)150 V
Continuous Drain Current (Id)4.1 A

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability of up to 4.1 A
  • High voltage rating of 150 V
  • Robust thermal performance with a maximum junction temperature of 150 °C
  • Compact package suitable for space-constrained designs

Applications

  • DC/DC converters
  • Off-Line UPS systems
  • Distributed Power Architectures
  • Voltage Regulator Modules (VRMs)

Q & A

  1. What is the maximum junction temperature of the FDS2582 MOSFET? The maximum junction temperature is 150 °C.
  2. What is the maximum operating temperature of the FDS2582? The maximum operating temperature is also 150 °C.
  3. What is the maximum power dissipation of the FDS2582? The maximum power dissipation is 2.5 W.
  4. What is the input capacitance of the FDS2582? The input capacitance is 1.29 nF.
  5. What is the drain-source voltage rating of the FDS2582? The drain-source voltage rating is 150 V.
  6. What is the continuous drain current rating of the FDS2582? The continuous drain current rating is 4.1 A.
  7. In what types of applications is the FDS2582 commonly used? The FDS2582 is commonly used in DC/DC converters, Off-Line UPS systems, Distributed Power Architectures, and Voltage Regulator Modules (VRMs).
  8. What family of MOSFETs does the FDS2582 belong to? The FDS2582 belongs to the POWERTRENCH® family of MOSFETs.
  9. Who is the manufacturer of the FDS2582 MOSFET? The FDS2582 is manufactured by onsemi.
  10. Where can I find detailed specifications for the FDS2582? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:66mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.32
241

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDS2582 FDS2572
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 66mOhm @ 4.1A, 10V 47mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 25 V 2050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT