FDS2582
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onsemi FDS2582

Manufacturer No:
FDS2582
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 4.1A 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The FDS2582 is a small signal N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is part of the POWERTRENCH® family and is designed for high-performance applications. It offers a combination of low on-resistance, high current capability, and robust thermal performance, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Input Capacitance1.29 nF
Drain-Source Voltage (Vds)150 V
Continuous Drain Current (Id)4.1 A

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability of up to 4.1 A
  • High voltage rating of 150 V
  • Robust thermal performance with a maximum junction temperature of 150 °C
  • Compact package suitable for space-constrained designs

Applications

  • DC/DC converters
  • Off-Line UPS systems
  • Distributed Power Architectures
  • Voltage Regulator Modules (VRMs)

Q & A

  1. What is the maximum junction temperature of the FDS2582 MOSFET? The maximum junction temperature is 150 °C.
  2. What is the maximum operating temperature of the FDS2582? The maximum operating temperature is also 150 °C.
  3. What is the maximum power dissipation of the FDS2582? The maximum power dissipation is 2.5 W.
  4. What is the input capacitance of the FDS2582? The input capacitance is 1.29 nF.
  5. What is the drain-source voltage rating of the FDS2582? The drain-source voltage rating is 150 V.
  6. What is the continuous drain current rating of the FDS2582? The continuous drain current rating is 4.1 A.
  7. In what types of applications is the FDS2582 commonly used? The FDS2582 is commonly used in DC/DC converters, Off-Line UPS systems, Distributed Power Architectures, and Voltage Regulator Modules (VRMs).
  8. What family of MOSFETs does the FDS2582 belong to? The FDS2582 belongs to the POWERTRENCH® family of MOSFETs.
  9. Who is the manufacturer of the FDS2582 MOSFET? The FDS2582 is manufactured by onsemi.
  10. Where can I find detailed specifications for the FDS2582? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:66mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

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Similar Products

Part Number FDS2582 FDS2572
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 66mOhm @ 4.1A, 10V 47mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 25 V 2050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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