FDP26N40
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onsemi FDP26N40

Manufacturer No:
FDP26N40
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 400V 26A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The FDP26N40 is a high-performance N-Channel enhancement mode power MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed using Fairchild's proprietary planar stripe, DMOS technology, which ensures high efficiency and reliability in various power management applications. The FDP26N40 is particularly noted for its low on-resistance, making it suitable for applications requiring high current handling and minimal power loss.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id)26 A
On-Resistance (Rds(on))Typically 26 mΩ at Vgs = 10 V
Gate Threshold Voltage (Vth)Typically 2.5 V
Operating Junction Temperature (Tj)-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) for reduced power loss and increased efficiency.
  • High continuous drain current (Id) of 26 A, suitable for high-power applications.
  • Enhancement mode operation for easy control and high reliability.
  • Planar stripe, DMOS technology for improved performance and durability.
  • Wide operating junction temperature range (-55°C to 150°C) for robust operation in various environments.

Applications

The FDP26N40 is ideal for a variety of power management and motor control applications, including:

  • Motor drivers and control systems.
  • Power supplies and DC-DC converters.
  • Automotive systems and electric vehicles.
  • Industrial control and automation.
  • High-power switching and amplification.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the FDP26N40?
    The maximum drain to source voltage (Vdss) of the FDP26N40 is 40 V.
  2. What is the typical on-resistance (Rds(on)) of the FDP26N40?
    The typical on-resistance (Rds(on)) of the FDP26N40 is 26 mΩ at Vgs = 10 V.
  3. What is the continuous drain current (Id) rating of the FDP26N40?
    The continuous drain current (Id) rating of the FDP26N40 is 26 A.
  4. What technology is used in the FDP26N40?
    The FDP26N40 is produced using Fairchild's proprietary planar stripe, DMOS technology.
  5. What are the typical applications of the FDP26N40?
    The FDP26N40 is commonly used in motor drivers, power supplies, automotive systems, industrial control, and high-power switching applications.
  6. What is the operating junction temperature range of the FDP26N40?
    The operating junction temperature range of the FDP26N40 is -55°C to 150°C.
  7. Is the FDP26N40 an N-Channel or P-Channel MOSFET?
    The FDP26N40 is an N-Channel MOSFET.
  8. What is the gate threshold voltage (Vth) of the FDP26N40?
    The typical gate threshold voltage (Vth) of the FDP26N40 is 2.5 V.
  9. Is the FDP26N40 still in production?
    No, the FDP26N40 is listed as obsolete.
  10. Where can I find detailed specifications for the FDP26N40?
    Detailed specifications for the FDP26N40 can be found in the datasheet available on websites such as Mouser, Digi-Key, and the onsemi official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3185 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):265W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP26N40 FDP24N40
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 13A, 10V 175mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3185 pF @ 25 V 3020 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 265W (Tc) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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