FDP24N40
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onsemi FDP24N40

Manufacturer No:
FDP24N40
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 400V 24A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The FDP24N40 is a high-voltage N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is designed to offer superior performance in various high-power applications. It is tailored to reduce on-state resistance, enhance switching performance, and provide higher avalanche energy strength, making it an ideal choice for demanding electronic systems.

Key Specifications

ParameterValue
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage400 V
Drain to Source On-Resistance (Rds(on))175 mΩ
Gate Threshold Voltage (Vgs(th))2-4 V
Package TypeTO220-3

Key Features

  • Low on-state resistance (Rds(on)) of 175 mΩ, which minimizes power losses and improves efficiency.
  • High drain to source breakdown voltage of 400 V, ensuring robust performance in high-voltage applications.
  • Enhanced switching performance, making it suitable for high-frequency operations.
  • Higher avalanche energy strength, providing better reliability under transient conditions.
  • Standard 40V gate level, compatible with a wide range of control circuits.

Applications

The FDP24N40 MOSFET is widely used in various high-power applications, including:

  • Motor drivers: Due to its low on-resistance and high current handling, it is ideal for motor control systems.
  • Power supplies: Suitable for high-voltage DC-DC converters and power supply units.
  • Industrial control: Used in industrial automation and control systems where high reliability and performance are critical.
  • Automotive systems: Applicable in automotive electronics requiring high power and efficiency.

Q & A

  1. What is the continuous drain current of the FDP24N40 MOSFET?
    The continuous drain current (ID) of the FDP24N40 is 24 A.
  2. What is the drain to source breakdown voltage of the FDP24N40?
    The drain to source breakdown voltage is 400 V.
  3. What is the on-state resistance (Rds(on)) of the FDP24N40?
    The on-state resistance (Rds(on)) is 175 mΩ.
  4. In what package type is the FDP24N40 available?
    The FDP24N40 is available in the TO220-3 package type.
  5. What are the typical applications of the FDP24N40 MOSFET?
    The FDP24N40 is typically used in motor drivers, power supplies, industrial control systems, and automotive electronics.
  6. What is the gate threshold voltage range of the FDP24N40?
    The gate threshold voltage (Vgs(th)) range is 2-4 V.
  7. Why is the FDP24N40 preferred for high-power applications?
    The FDP24N40 is preferred due to its low on-state resistance, high breakdown voltage, and enhanced switching performance.
  8. Is the FDP24N40 suitable for high-frequency operations?
    Yes, the FDP24N40 is suitable for high-frequency operations due to its enhanced switching performance.
  9. What is the significance of the higher avalanche energy strength in the FDP24N40?
    The higher avalanche energy strength provides better reliability under transient conditions.
  10. Can the FDP24N40 be used in automotive systems?
    Yes, the FDP24N40 can be used in automotive electronics requiring high power and efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3020 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP24N40 FDP26N40
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 12A, 10V 160mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 25 V 3185 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 227W (Tc) 265W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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