FDN5618P-B8
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onsemi FDN5618P-B8

Manufacturer No:
FDN5618P-B8
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
FET -60V 1.7 MOHM SSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN5618P-B8 is a small signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by onsemi. This component is designed to offer high performance and fast switching speeds, making it suitable for a variety of electronic applications. The FDN5618P-B8 features onsemi's advanced trench technology, which ensures extremely low on-resistance (RDS(ON)) and high efficiency.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (VDS)-60 V
Maximum Continuous Drain Current (ID)1.25 A
On-Resistance (RDS(ON)) @ VGS = -10 V0.200 Ω
On-Resistance (RDS(ON)) @ VGS = -4.5 V0.230 Ω
Package TypeSSOT3

Key Features

  • High Performance Trench Technology for extremely low RDS(ON)
  • Fast Switching Speed
  • Low On-Resistance: 0.200 Ω @ VGS = -10 V and 0.230 Ω @ VGS = -4.5 V
  • Maximum Continuous Drain Current of 1.25 A
  • Maximum Drain-Source Voltage of -60 V

Applications

The FDN5618P-B8 MOSFET is suitable for various applications requiring high efficiency and fast switching, such as:

  • Power Management Systems
  • Switching Regulators
  • Audio Amplifiers
  • Motor Control Circuits
  • General Purpose Switching Applications

Q & A

  1. What is the maximum continuous drain current of the FDN5618P-B8 MOSFET?
    The maximum continuous drain current is 1.25 A.
  2. What is the maximum drain-source voltage for the FDN5618P-B8?
    The maximum drain-source voltage is -60 V.
  3. What is the on-resistance (RDS(ON)) of the FDN5618P-B8 at VGS = -10 V?
    The on-resistance (RDS(ON)) at VGS = -10 V is 0.200 Ω.
  4. What is the on-resistance (RDS(ON)) of the FDN5618P-B8 at VGS = -4.5 V?
    The on-resistance (RDS(ON)) at VGS = -4.5 V is 0.230 Ω.
  5. What package type does the FDN5618P-B8 come in?
    The FDN5618P-B8 comes in an SSOT3 package.
  6. What technology is used in the FDN5618P-B8 MOSFET?
    The FDN5618P-B8 uses onsemi's advanced trench technology.
  7. Is the FDN5618P-B8 suitable for high-frequency applications?
    Yes, the FDN5618P-B8 is suitable for high-frequency applications due to its fast switching speed.
  8. Can the FDN5618P-B8 be used in power management systems?
    Yes, the FDN5618P-B8 is suitable for power management systems.
  9. Is the FDN5618P-B8 still in production?
    No, the FDN5618P-B8 has been discontinued by onsemi as of January 2022.
  10. Where can I find more detailed specifications for the FDN5618P-B8?
    You can find detailed specifications on the onsemi website, Digi-Key, or by downloading the datasheet from Avaq.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):460mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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