FDN5618P
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onsemi FDN5618P

Manufacturer No:
FDN5618P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.25A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN5618P is a 60V P-Channel Logic Level PowerTrench® MOSFET produced by onsemi. This device utilizes onsemi’s high voltage PowerTrench process and is optimized for power management applications. It offers a continuous drain current of 1.25 A and a maximum drain-source voltage of 60 V, making it suitable for a variety of power management tasks.

Key Specifications

Parameter Rating Units
Drain-Source Voltage (VDSS) -60 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) -1.25 A
Pulsed Drain Current (ID) -10 A
On-Resistance (RDS(ON)) @ VGS = -10 V 0.170 Ω
On-Resistance (RDS(ON)) @ VGS = -4.5 V 0.230 Ω
Maximum Power Dissipation (PD) 0.46 W
Thermal Resistance, Junction-to-Ambient (RθJA) 250 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 75 °C/W
Operating and Storage Junction Temperature Range -55 to +150 °C
Package Style SSOT-3
Mounting Method Surface Mount

Key Features

  • Continuous drain current of 1.25 A and maximum drain-source voltage of 60 V.
  • Low on-resistance (RDS(ON)) of 0.170 Ω @ VGS = -10 V and 0.230 Ω @ VGS = -4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • Pb-free and halogen-free.

Applications

  • DC-DC converters.
  • Load switch.
  • Power management.

Q & A

  1. What is the maximum drain-source voltage of the FDN5618P MOSFET? The maximum drain-source voltage is -60 V.
  2. What is the continuous drain current rating of the FDN5618P? The continuous drain current rating is -1.25 A.
  3. What are the typical on-resistance values for the FDN5618P? The on-resistance is 0.170 Ω @ VGS = -10 V and 0.230 Ω @ VGS = -4.5 V.
  4. What is the thermal resistance, junction-to-ambient (RθJA) for the FDN5618P? The thermal resistance, junction-to-ambient is 250 °C/W.
  5. What are the common applications for the FDN5618P MOSFET? Common applications include DC-DC converters, load switches, and power management.
  6. Is the FDN5618P Pb-free and halogen-free? Yes, the FDN5618P is Pb-free and halogen-free.
  7. What is the package style and mounting method for the FDN5618P? The package style is SSOT-3, and the mounting method is surface mount.
  8. What is the maximum power dissipation for the FDN5618P? The maximum power dissipation is 0.46 W.
  9. What is the operating and storage junction temperature range for the FDN5618P? The operating and storage junction temperature range is -55 to +150 °C.
  10. What is the gate-source voltage rating for the FDN5618P? The gate-source voltage rating is ±20 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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