FDMS8820
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onsemi FDMS8820

Manufacturer No:
FDMS8820
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 28A/116A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS8820 is an N-Channel PowerTrench MOSFET designed and manufactured by onsemi. This device is specifically engineered to enhance the overall efficiency and minimize switch node ringing in DC/DC converters. It is part of onsemi's low to medium voltage MOSFET family, offering high performance and reliability in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)116 A
Drain-Source On-Resistance (Rds(on))2.0 mΩ @ 10 V
Maximum Power Dissipation (Pd)78 W
Package TypePower56

Key Features

  • Low on-resistance (Rds(on)) of 2.0 mΩ at 10 V, ensuring minimal power loss.
  • High continuous drain current (Id) of 116 A, suitable for high-power applications.
  • Designed to minimize switch node ringing, enhancing the efficiency of DC/DC converters.
  • Power56 package, providing a compact and efficient solution for power management.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The FDMS8820 is ideal for various power management applications, including:

  • DC/DC converters: Enhances efficiency and reduces switch node ringing.
  • Power supplies: Suitable for high-power and high-efficiency power supply designs.
  • Motor control: Used in motor drive applications requiring high current and low on-resistance.
  • Industrial and automotive systems: Applicable in high-reliability and high-performance systems.

Q & A

  1. What is the voltage rating of the FDMS8820 MOSFET?
    The voltage rating (Vds) of the FDMS8820 is 30 V.
  2. What is the continuous drain current (Id) of the FDMS8820?
    The continuous drain current (Id) is 116 A.
  3. What is the on-resistance (Rds(on)) of the FDMS8820 at 10 V?
    The on-resistance (Rds(on)) at 10 V is 2.0 mΩ.
  4. What is the maximum power dissipation (Pd) of the FDMS8820?
    The maximum power dissipation (Pd) is 78 W.
  5. In what package is the FDMS8820 available?
    The FDMS8820 is available in the Power56 package.
  6. Is the FDMS8820 RoHS compliant?
    Yes, the FDMS8820 is RoHS compliant.
  7. What are the primary applications of the FDMS8820?
    The primary applications include DC/DC converters, power supplies, motor control, and industrial and automotive systems.
  8. Why is the FDMS8820 designed to minimize switch node ringing?
    The FDMS8820 is designed to minimize switch node ringing to enhance the efficiency of DC/DC converters.
  9. Where can I find detailed specifications for the FDMS8820?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and TME.
  10. What is the typical use case for the FDMS8820 in power management?
    The FDMS8820 is typically used in high-power and high-efficiency power management applications where low on-resistance and high current handling are critical.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5315 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number FDMS8820 FDMS8880 FDMS8020
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 116A (Tc) 13.5A (Ta), 21A (Tc) 26A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 28A, 10V 8.5mOhm @ 13.5A, 10V 2.5mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 33 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5315 pF @ 15 V 1585 pF @ 15 V 3800 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 78W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 65W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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