FDMS6681Z
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onsemi FDMS6681Z

Manufacturer No:
FDMS6681Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 21.1A/49A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS6681Z is a P-Channel PowerTrench® MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is designed for high-performance applications requiring low on-resistance and high current handling. Although it is currently listed as obsolete and not in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-30 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)-12 A
RDS(ON) (On-Resistance)12 mΩ (typical at VGS = -10 V, ID = -6 A)
PD (Power Dissipation)73 W
PackagePQFN8

Key Features

  • Low on-resistance (RDS(ON)) of 12 mΩ (typical at VGS = -10 V, ID = -6 A).
  • High current handling capability with a continuous drain current (ID) of -12 A.
  • PowerTrench® technology for improved performance and reliability.
  • Compact PQFN8 package for space-efficient designs.

Applications

The FDMS6681Z is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDMS6681Z?
    The maximum drain-source voltage (VDS) is -30 V.
  2. What is the typical on-resistance (RDS(ON)) of the FDMS6681Z?
    The typical on-resistance (RDS(ON)) is 12 mΩ at VGS = -10 V, ID = -6 A.
  3. What is the continuous drain current (ID) rating of the FDMS6681Z?
    The continuous drain current (ID) rating is -12 A.
  4. What package type is the FDMS6681Z available in?
    The FDMS6681Z is available in the PQFN8 package.
  5. Is the FDMS6681Z still in production?
    No, the FDMS6681Z is listed as obsolete and not in production.
  6. What technology is used in the FDMS6681Z?
    The FDMS6681Z uses PowerTrench® technology.
  7. What is the maximum power dissipation (PD) of the FDMS6681Z?
    The maximum power dissipation (PD) is 73 W.
  8. What are some common applications for the FDMS6681Z?
    Common applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, and automotive/industrial power management systems.
  9. What is the maximum gate-source voltage (VGS) for the FDMS6681Z?
    The maximum gate-source voltage (VGS) is ±20 V.
  10. Where can I find detailed specifications for the FDMS6681Z?
    Detailed specifications can be found in the datasheets available from onsemi, Farnell, and other electronic component distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21.1A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 22.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:241 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:10380 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 73W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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