FDMS10C4D2N
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onsemi FDMS10C4D2N

Manufacturer No:
FDMS10C4D2N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 17A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS10C4D2N is a high-performance N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed to offer superior performance in various power management and motor driver applications. It features advanced PowerTrench technology, which incorporates Shielded Gate technology to enhance its electrical characteristics and reliability. The FDMS10C4D2N is known for its low on-resistance, high current handling capability, and robust protection features, making it an ideal choice for demanding applications.

Key Specifications

ParameterValue
Channel TypeN-Channel
Number of Elements per Chip1
Maximum Drain Source Voltage (V)100V
Maximum Gate Source Voltage (V)±20V
Maximum Continuous Drain Current (A)124A
On-Resistance (mΩ)4.2mΩ

Key Features

  • Advanced PowerTrench process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance of 4.2mΩ for efficient power handling.
  • High maximum continuous drain current of 124A.
  • Temperature and current limit protection for enhanced safety.
  • Standard 40V gate level power MOSFET.

Applications

The FDMS10C4D2N is suitable for a variety of applications, including:

  • Motor drivers: Due to its high current handling and low on-resistance, it is ideal for motor control systems.
  • Power management: Used in power supply units, DC-DC converters, and other power management circuits.
  • Industrial control systems: Suitable for use in industrial automation and control systems.
  • Automotive systems: Can be used in various automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain source voltage of the FDMS10C4D2N?
    The maximum drain source voltage is 100V.
  2. What is the on-resistance of the FDMS10C4D2N?
    The on-resistance is 4.2mΩ.
  3. What is the maximum continuous drain current of the FDMS10C4D2N?
    The maximum continuous drain current is 124A.
  4. What technology is used in the FDMS10C4D2N?
    The FDMS10C4D2N uses advanced PowerTrench process with Shielded Gate technology.
  5. Does the FDMS10C4D2N have built-in protection features?
    Yes, it includes temperature and current limit protection.
  6. What are some typical applications of the FDMS10C4D2N?
    Typical applications include motor drivers, power management, industrial control systems, and automotive systems.
  7. What is the maximum gate source voltage of the FDMS10C4D2N?
    The maximum gate source voltage is ±20V.
  8. Is the FDMS10C4D2N suitable for high-current applications?
    Yes, it is designed to handle high currents up to 124A.
  9. What is the channel type of the FDMS10C4D2N?
    The channel type is N-Channel.
  10. Where can I find detailed specifications for the FDMS10C4D2N?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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