FDMS007N08LC
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onsemi FDMS007N08LC

Manufacturer No:
FDMS007N08LC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 14A/84A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS007N08LC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is designed for high-efficiency applications requiring low on-state resistance and reduced switching noise/EMI.

Key Specifications

Parameter Value Unit
VDS (Drain to Source Voltage) 80 V
VGS (Gate to Source Voltage) ±20 V
ID (Drain Current) - Continuous at TC = 25°C 84 A
ID (Drain Current) - Continuous at TC = 100°C 53 A
rDS(on) at VGS = 10 V, ID = 21 A 6.7 mΩ
rDS(on) at VGS = 4.5 V, ID = 17 A 9.9 mΩ
EAS (Single Pulse Avalanche Energy) 181.5 mJ mJ
PD (Power Dissipation) at TC = 25°C 92.6 W W
TJ, TSTG (Operating and Storage Junction Temperature Range) -55 to +150 °C
RθJC (Thermal Resistance, Junction to Case) 1.35 °C/W °C/W
RθJA (Thermal Resistance, Junction to Ambient) 50 °C/W °C/W

Key Features

  • Shielded Gate MOSFET Technology
  • Low on-state resistance: Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A
  • 50% Lower Qrr than other MOSFET suppliers
  • Lowers switching noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Primary DC-DC MOSFET
  • Synchronous Rectifier in DC-DC and AC-DC
  • Motor Drive
  • Solar applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS007N08LC?

    The maximum drain to source voltage (VDS) is 80 V.

  2. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 84 A.

  3. What is the on-state resistance (rDS(on)) at VGS = 10 V and ID = 21 A?

    The on-state resistance (rDS(on)) at VGS = 10 V and ID = 21 A is 6.7 mΩ.

  4. What are the thermal resistance values for junction to case (RθJC) and junction to ambient (RθJA)?

    The thermal resistance for junction to case (RθJC) is 1.35 °C/W, and for junction to ambient (RθJA) is 50 °C/W.

  5. Is the FDMS007N08LC Pb-Free and RoHS Compliant?
  6. What are some typical applications of the FDMS007N08LC?

    Typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar applications.

  7. What is the maximum single pulse avalanche energy (EAS) of the FDMS007N08LC?

    The maximum single pulse avalanche energy (EAS) is 181.5 mJ.

  8. What is the gate to source threshold voltage (VGS(th)) range?

    The gate to source threshold voltage (VGS(th)) range is 1.0 to 2.5 V.

  9. How does the Shielded Gate technology benefit the MOSFET?

    The Shielded Gate technology minimizes on-state resistance and maintains superior switching performance while reducing switching noise/EMI.

  10. What is the reverse recovery charge (Qrr) of the FDMS007N08LC?

    The reverse recovery charge (Qrr) is 24 to 28 nC at IF = 10 A, di/dt = 300 A/μs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 92.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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