Overview
The FDMS007N08LC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is designed for high-efficiency applications requiring low on-state resistance and reduced switching noise/EMI.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 80 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current) - Continuous at TC = 25°C | 84 | A |
| ID (Drain Current) - Continuous at TC = 100°C | 53 | A |
| rDS(on) at VGS = 10 V, ID = 21 A | 6.7 mΩ | mΩ |
| rDS(on) at VGS = 4.5 V, ID = 17 A | 9.9 mΩ | mΩ |
| EAS (Single Pulse Avalanche Energy) | 181.5 mJ | mJ |
| PD (Power Dissipation) at TC = 25°C | 92.6 W | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | 1.35 °C/W | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 50 °C/W | °C/W |
Key Features
- Shielded Gate MOSFET Technology
- Low on-state resistance: Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A
- 50% Lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar applications
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS007N08LC?
The maximum drain to source voltage (VDS) is 80 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 84 A.
- What is the on-state resistance (rDS(on)) at VGS = 10 V and ID = 21 A?
The on-state resistance (rDS(on)) at VGS = 10 V and ID = 21 A is 6.7 mΩ.
- What are the thermal resistance values for junction to case (RθJC) and junction to ambient (RθJA)?
The thermal resistance for junction to case (RθJC) is 1.35 °C/W, and for junction to ambient (RθJA) is 50 °C/W.
- Is the FDMS007N08LC Pb-Free and RoHS Compliant?
- What are some typical applications of the FDMS007N08LC?
Typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar applications.
- What is the maximum single pulse avalanche energy (EAS) of the FDMS007N08LC?
The maximum single pulse avalanche energy (EAS) is 181.5 mJ.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 1.0 to 2.5 V.
- How does the Shielded Gate technology benefit the MOSFET?
The Shielded Gate technology minimizes on-state resistance and maintains superior switching performance while reducing switching noise/EMI.
- What is the reverse recovery charge (Qrr) of the FDMS007N08LC?
The reverse recovery charge (Qrr) is 24 to 28 nC at IF = 10 A, di/dt = 300 A/μs.
