FDMC86340
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onsemi FDMC86340

Manufacturer No:
FDMC86340
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 14A/48A POWER33
Delivery:
Payment:
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Product Introduction

Overview

The FDMC86340 is an N-Channel Shielded Gate Power Trench MOSFET produced by onsemi. This device utilizes an advanced Power Trench process, incorporating Shielded Gate technology to enhance performance and reliability. Although it is currently obsolete and not in production, it remains a significant component in legacy systems and for reference purposes.

Key Specifications

ParameterValue
Voltage Rating (Vds)80 V
Continuous Drain Current (Id) at Ta14 A
Continuous Drain Current (Id) at Tc48 A
Power Dissipation (Pd) at Ta2.3 W
Power Dissipation (Pd) at Tc54 W
On-Resistance (Rds(on))6.5 mΩ
Package TypeSurface Mount Power33

Key Features

  • Advanced Power Trench process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance (Rds(on)) of 6.5 mΩ, reducing power losses and enhancing efficiency.
  • High current handling capability with continuous drain current of up to 48 A at Tc.
  • Surface Mount Power33 package for easy integration into various applications.

Applications

The FDMC86340 MOSFET is suitable for a variety of applications requiring high current handling and low on-resistance. These include but are not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-frequency switching applications
  • Automotive and industrial power management systems

Q & A

  1. What is the voltage rating of the FDMC86340 MOSFET?
    The voltage rating (Vds) of the FDMC86340 MOSFET is 80 V.
  2. What is the continuous drain current at ambient temperature (Ta) for the FDMC86340?
    The continuous drain current at Ta is 14 A.
  3. What is the on-resistance (Rds(on)) of the FDMC86340 MOSFET?
    The on-resistance (Rds(on)) is 6.5 mΩ.
  4. What package type is the FDMC86340 MOSFET available in?
    The FDMC86340 is available in a Surface Mount Power33 package.
  5. Is the FDMC86340 MOSFET still in production?
    No, the FDMC86340 MOSFET is obsolete and not in production.
  6. What are some typical applications for the FDMC86340 MOSFET?
    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.
  7. What technology does the FDMC86340 MOSFET use?
    The FDMC86340 uses an advanced Power Trench process with Shielded Gate technology.
  8. What is the power dissipation (Pd) at Tc for the FDMC86340 MOSFET?
    The power dissipation (Pd) at Tc is 54 W.
  9. Can the FDMC86340 be used in automotive applications?
    Yes, the FDMC86340 can be used in automotive and industrial power management systems.
  10. Where can I find detailed specifications for the FDMC86340 MOSFET?
    Detailed specifications can be found in the datasheet available on websites such as Digi-Key, Mouser, and the official onsemi website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3885 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC86340 FDMC86240 FDMC86320
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 150 V 80 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 48A (Tc) 4.6A (Ta), 16A (Tc) 10.7A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 6V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 14A, 10V 51mOhm @ 4.6A, 10V 11.7mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 15 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3885 pF @ 40 V 905 pF @ 75 V 2640 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 2.3W (Ta), 54W (Tc) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package Power33 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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