Overview
The FDMC008N08C is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is designed to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is suitable for various high-power applications requiring efficient and reliable operation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 80 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 60 | A |
| Continuous Drain Current (ID) at TC = 100°C | 38 | A |
| Pulsed Drain Current (ID) | 273 | A |
| Power Dissipation (PD) at TC = 25°C | 57 | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 21 A | 7.8 | mΩ |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 6 V, ID = 10 A | 19.3 | mΩ |
| Thermal Resistance, Junction to Case (RθJC) | 2.2 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 | °C/W |
Key Features
- Shielded Gate MOSFET Technology
- Low on-state resistance: Max RDS(on) = 7.8 mΩ at VGS = 10 V, ID = 21 A
- 50% lower Qrr than other MOSFET suppliers, reducing switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- Pb-free, halide-free, and RoHS compliant
Applications
- Primary DC-DC MOSFET
- Synchronous rectifier in DC-DC and AC-DC converters
- Motor drive applications
- Solar power systems
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC008N08C? The maximum VDS is 80 V.
- What is the continuous drain current (ID) at a case temperature of 25°C? The continuous ID at TC = 25°C is 60 A.
- What is the thermal resistance from junction to case (RθJC) of the FDMC008N08C? The RθJC is 2.2 °C/W.
- Is the FDMC008N08C RoHS compliant? Yes, it is Pb-free, halide-free, and RoHS compliant.
- What are the typical applications of the FDMC008N08C? Typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC converters, motor drive, and solar power systems.
- What is the maximum power dissipation (PD) at TC = 25°C? The maximum PD at TC = 25°C is 57 W.
- What is the gate to source threshold voltage (VGS(th)) of the FDMC008N08C? The VGS(th) is between 2.0 V and 4.0 V.
- How does the Shielded Gate technology benefit the FDMC008N08C? The Shielded Gate technology minimizes on-state resistance and maintains superior switching performance with a best-in-class soft body diode.
- What is the single pulse avalanche energy (EAS) of the FDMC008N08C? The EAS is 150 mJ.
- What package type is the FDMC008N08C available in? The FDMC008N08C is available in a WDFN8 package.
