FDMC007N30D
  • Share:

onsemi FDMC007N30D

Manufacturer No:
FDMC007N30D
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CHANNEL 30V 46A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC007N30D is a dual N-Channel MOSFET produced by onsemi, designed for high-efficiency power management. This device features two specialized N-Channel MOSFETs in a compact Power33 (3mm × 3mm MLP) package. The internal connection of the switch node simplifies the placement and routing of synchronous buck converters, making it ideal for applications requiring optimal power efficiency.

Key Specifications

Parameter Q1 Q2 Unit
VDS (Drain to Source Voltage) 30 30 V
VGS (Gate to Source Voltage) ±12 ±12 V
ID (Continuous Drain Current at TC = 25°C) 29 18 A
ID (Continuous Drain Current at TA = 25°C) 10 16 A
RDS(on) at VGS = 10 V, ID = 10 A 11.6 mΩ 6.4 mΩ
RDS(on) at VGS = 4.5 V, ID = 9 A 13.3 mΩ 7.0 mΩ
TJ (Operating and Storage Junction Temperature Range) −55 to +150 °C −55 to +150 °C °C
RθJC (Thermal Resistance, Junction to Case) 8.2 °C/W 6.1 °C/W °C/W
RθJA (Thermal Resistance, Junction to Ambient) 65 °C/W 50 °C/W °C/W

Key Features

  • Dual N-Channel MOSFETs in a Power33 (3mm × 3mm MLP) package.
  • Internally connected switch node for easy placement and routing of synchronous buck converters.
  • Optimal power efficiency with low RDS(on) values: 11.6 mΩ for Q1 and 6.4 mΩ for Q2 at VGS = 10 V.
  • High continuous drain current ratings: up to 29 A for Q1 and 18 A for Q2 at TC = 25°C.
  • Wide operating and storage junction temperature range: −55 to +150 °C.
  • RoHS compliant.

Applications

  • Mobile Computing
  • Mobile Internet Devices
  • General Purpose Point of Load (POL) converters

Q & A

  1. What is the FDMC007N30D?

    The FDMC007N30D is a dual N-Channel MOSFET device produced by onsemi, designed for high-efficiency power management in compact applications.

  2. What is the package type of the FDMC007N30D?

    The device is packaged in a Power33 (3mm × 3mm MLP) package.

  3. What are the maximum drain to source voltages for Q1 and Q2?

    Both Q1 and Q2 have a maximum drain to source voltage (VDS) of 30 V.

  4. What are the typical RDS(on) values for Q1 and Q2 at VGS = 10 V?

    The typical RDS(on) values are 11.6 mΩ for Q1 and 6.4 mΩ for Q2 at VGS = 10 V.

  5. What is the operating and storage junction temperature range for the FDMC007N30D?

    The operating and storage junction temperature range is −55 to +150 °C.

  6. Is the FDMC007N30D RoHS compliant?
  7. What are some typical applications for the FDMC007N30D?

    Typical applications include mobile computing, mobile internet devices, and general purpose point of load (POL) converters.

  8. What is the thermal resistance (RθJC) for Q1 and Q2?

    The thermal resistance (RθJC) is 8.2 °C/W for Q1 and 6.1 °C/W for Q2.

  9. What is the maximum continuous drain current for Q1 and Q2 at TC = 25°C?

    The maximum continuous drain current is 29 A for Q1 and 18 A for Q2 at TC = 25°C.

  10. How does the internal switch node connection benefit the design?

    The internal connection of the switch node simplifies the placement and routing of synchronous buck converters, enhancing design efficiency.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:46A
Rds On (Max) @ Id, Vgs:11.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1110pF @ 15V, 2360pF @ 15V
Power - Max:1.9W, 2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-Power33 (3x3)
0 Remaining View Similar

In Stock

$0.99
689

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
2N7002PS,115
2N7002PS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
FDC6306P
FDC6306P
onsemi
MOSFET 2P-CH 20V 1.9A SSOT6
BUK7K52-60EX
BUK7K52-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 15.4A LFPAK
BUK9K6R8-40EX
BUK9K6R8-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
NVMFD5C470NLT1G
NVMFD5C470NLT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
EFC4621R-TR
EFC4621R-TR
onsemi
MOSFET 2N-CH EFCP
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
PHKD13N03LT,118
PHKD13N03LT,118
Nexperia USA Inc.
MOSFET 2N-CH 30V 10.4A 8SOIC
NVMFD5852NLT1G
NVMFD5852NLT1G
onsemi
MOSFET 2N-CH 40V 15A SO8FL
FDPC4044-P
FDPC4044-P
onsemi
MOSFET N-CHANNEL 8MLP

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5