FDMC007N30D
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onsemi FDMC007N30D

Manufacturer No:
FDMC007N30D
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CHANNEL 30V 46A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC007N30D is a dual N-Channel MOSFET produced by onsemi, designed for high-efficiency power management. This device features two specialized N-Channel MOSFETs in a compact Power33 (3mm × 3mm MLP) package. The internal connection of the switch node simplifies the placement and routing of synchronous buck converters, making it ideal for applications requiring optimal power efficiency.

Key Specifications

Parameter Q1 Q2 Unit
VDS (Drain to Source Voltage) 30 30 V
VGS (Gate to Source Voltage) ±12 ±12 V
ID (Continuous Drain Current at TC = 25°C) 29 18 A
ID (Continuous Drain Current at TA = 25°C) 10 16 A
RDS(on) at VGS = 10 V, ID = 10 A 11.6 mΩ 6.4 mΩ
RDS(on) at VGS = 4.5 V, ID = 9 A 13.3 mΩ 7.0 mΩ
TJ (Operating and Storage Junction Temperature Range) −55 to +150 °C −55 to +150 °C °C
RθJC (Thermal Resistance, Junction to Case) 8.2 °C/W 6.1 °C/W °C/W
RθJA (Thermal Resistance, Junction to Ambient) 65 °C/W 50 °C/W °C/W

Key Features

  • Dual N-Channel MOSFETs in a Power33 (3mm × 3mm MLP) package.
  • Internally connected switch node for easy placement and routing of synchronous buck converters.
  • Optimal power efficiency with low RDS(on) values: 11.6 mΩ for Q1 and 6.4 mΩ for Q2 at VGS = 10 V.
  • High continuous drain current ratings: up to 29 A for Q1 and 18 A for Q2 at TC = 25°C.
  • Wide operating and storage junction temperature range: −55 to +150 °C.
  • RoHS compliant.

Applications

  • Mobile Computing
  • Mobile Internet Devices
  • General Purpose Point of Load (POL) converters

Q & A

  1. What is the FDMC007N30D?

    The FDMC007N30D is a dual N-Channel MOSFET device produced by onsemi, designed for high-efficiency power management in compact applications.

  2. What is the package type of the FDMC007N30D?

    The device is packaged in a Power33 (3mm × 3mm MLP) package.

  3. What are the maximum drain to source voltages for Q1 and Q2?

    Both Q1 and Q2 have a maximum drain to source voltage (VDS) of 30 V.

  4. What are the typical RDS(on) values for Q1 and Q2 at VGS = 10 V?

    The typical RDS(on) values are 11.6 mΩ for Q1 and 6.4 mΩ for Q2 at VGS = 10 V.

  5. What is the operating and storage junction temperature range for the FDMC007N30D?

    The operating and storage junction temperature range is −55 to +150 °C.

  6. Is the FDMC007N30D RoHS compliant?
  7. What are some typical applications for the FDMC007N30D?

    Typical applications include mobile computing, mobile internet devices, and general purpose point of load (POL) converters.

  8. What is the thermal resistance (RθJC) for Q1 and Q2?

    The thermal resistance (RθJC) is 8.2 °C/W for Q1 and 6.1 °C/W for Q2.

  9. What is the maximum continuous drain current for Q1 and Q2 at TC = 25°C?

    The maximum continuous drain current is 29 A for Q1 and 18 A for Q2 at TC = 25°C.

  10. How does the internal switch node connection benefit the design?

    The internal connection of the switch node simplifies the placement and routing of synchronous buck converters, enhancing design efficiency.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:46A
Rds On (Max) @ Id, Vgs:11.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1110pF @ 15V, 2360pF @ 15V
Power - Max:1.9W, 2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-Power33 (3x3)
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