Overview
The FDG6332C-F085 is a dual N and P-Channel PowerTrench MOSFET produced by onsemi. This device is designed using onsemi's advanced PowerTrench process, which is tailored to minimize on-state resistance while maintaining superior switching performance. The MOSFET is packaged in a small footprint SC70-6 package, making it ideal for applications where space is limited. It is qualified to AEC Q101 and is RoHS compliant, ensuring reliability and environmental sustainability.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 20 | -20 | V |
| Gate-Source Voltage (VGSS) | ±12 | ±12 | V |
| Continuous Drain Current (ID) | 0.7 | -0.6 | A |
| Pulsed Drain Current (ID) | 2.1 | -2 | A |
| Power Dissipation (PD) | 0.3 | 0.3 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 415 | 415 | °C/W |
| On-Resistance (RDS(ON)) at VGS = 4.5V | 300 mΩ | 420 mΩ | mΩ |
| On-Resistance (RDS(ON)) at VGS = 2.5V | 400 mΩ | 630 mΩ | mΩ |
| Input Capacitance (Ciss) at VDS = 10V, VGS = 0V, f = 1MHz | 113 pF | 114 pF | pF |
| Output Capacitance (Coss) at VDS = 10V, VGS = 0V, f = 1MHz | 34 pF | 24 pF | pF |
| Reverse Transfer Capacitance (Crss) at VDS = 10V, VGS = 0V, f = 1MHz | 16 pF | 9 pF | pF |
Key Features
- Complementary N and P-Channel MOSFETs in a single package.
- Low on-state resistance (RDS(ON)) - 300 mΩ for N-Channel at VGS = 4.5V and 420 mΩ for P-Channel at VGS = -4.5V.
- High performance trench technology for extremely low RDS(ON).
- Small footprint SC70-6 package, 51% smaller than SSOT-6 and 1mm thick.
- Low gate charge.
- Qualified to AEC Q101 and RoHS compliant.
Applications
The FDG6332C-F085 is suitable for a variety of applications where compact size and high performance are critical. These include:
- Portable electronics and battery-powered devices.
- Automotive systems, especially those requiring AEC Q101 qualification.
- Power management circuits in consumer electronics.
- Switching power supplies and DC-DC converters.
- Motor control and drive circuits.
Q & A
- What is the maximum drain-source voltage (VDSS) for the FDG6332C-F085?
The maximum drain-source voltage (VDSS) is 20V for the N-Channel and -20V for the P-Channel.
- What is the typical on-state resistance (RDS(ON)) at VGS = 4.5V?
The typical on-state resistance (RDS(ON)) is 300 mΩ for the N-Channel and 420 mΩ for the P-Channel at VGS = -4.5V.
- What package type is used for the FDG6332C-F085?
The FDG6332C-F085 is packaged in a SC70-6 package.
- Is the FDG6332C-F085 RoHS compliant?
Yes, the FDG6332C-F085 is RoHS compliant.
- What is the thermal resistance, junction-to-ambient (RθJA), for the FDG6332C-F085?
The thermal resistance, junction-to-ambient (RθJA), is 415°C/W.
- What are the typical applications for the FDG6332C-F085?
Typical applications include portable electronics, automotive systems, power management circuits, switching power supplies, and motor control circuits.
- What is the maximum continuous drain current (ID) for the FDG6332C-F085?
The maximum continuous drain current (ID) is 0.7A for the N-Channel and -0.6A for the P-Channel.
- Is the FDG6332C-F085 qualified to any automotive standards?
Yes, the FDG6332C-F085 is qualified to AEC Q101.
- What is the input capacitance (Ciss) at VDS = 10V and VGS = 0V?
The input capacitance (Ciss) is 113 pF for the N-Channel and 114 pF for the P-Channel.
- What are the turn-on and turn-off delay times for the FDG6332C-F085?
The turn-on delay time is 5ns for the N-Channel and 5.5ns for the P-Channel. The turn-off delay time is 9ns for the N-Channel and 6ns for the P-Channel.
