Overview
The FDD86110 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi, formerly part of Fairchild Semiconductor. This device is designed using advanced PowerTrench® technology, which incorporates Shielded Gate technology to optimize on-state resistance while maintaining superior switching performance. The FDD86110 is suitable for high-power applications requiring low on-state resistance and high current handling capabilities.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 | V |
| Drain Current (ID) - Continuous | 50 | A |
| Drain Current (ID) - Pulsed | 150 | A |
| Drain-Source On Resistance (rDS(on)) - Max at VGS = 10 V, ID = 12.5 A | 10.2 mΩ | mΩ |
| Drain-Source On Resistance (rDS(on)) - Max at VGS = 6 V, ID = 9.8 A | 16 mΩ | mΩ |
| Gate to Source Voltage (VGS) | ±20 | V |
| Gate to Source Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Power Dissipation (PD) at TC = 25 °C | 127 | W |
| Power Dissipation (PD) at TA = 25 °C | 3.1 | W |
| Thermal Resistance, Junction to Case (RθJC) | 0.98 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 40 | °C/W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Package Style | TO-252-3 (DPAK) | |
| Mounting Method | Surface Mount |
Key Features
- Shielded Gate MOSFET Technology: Optimized for low on-state resistance and superior switching performance.
- Low On-State Resistance: Maximum rDS(on) of 10.2 mΩ at VGS = 10 V, ID = 12.5 A and 16 mΩ at VGS = 6 V, ID = 9.8 A.
- High Current Handling: Continuous drain current of 50 A and pulsed drain current of 150 A.
- 100% UIL Tested: Ensures reliability and robustness.
- RoHS Compliant: Environmentally friendly.
Applications
- DC-DC Conversion: Suitable for high-efficiency power conversion applications.
- Power Management: Ideal for power management in various electronic systems.
- High-Power Switching: Used in applications requiring high current and low on-state resistance.
Q & A
- What is the maximum drain to source voltage (Vdss) of the FDD86110 MOSFET?
The maximum drain to source voltage (Vdss) is 100 V.
- What is the continuous drain current (ID) rating of the FDD86110?
The continuous drain current (ID) rating is 50 A.
- What is the typical on-state resistance (rDS(on)) of the FDD86110 at VGS = 10 V and ID = 12.5 A?
The typical on-state resistance (rDS(on)) is 10.2 mΩ.
- Is the FDD86110 RoHS compliant?
Yes, the FDD86110 is RoHS compliant.
- What is the package style of the FDD86110?
The package style is TO-252-3 (DPAK).
- What is the mounting method for the FDD86110?
The mounting method is Surface Mount.
- What are the typical applications of the FDD86110 MOSFET?
Typical applications include DC-DC conversion, power management, and high-power switching.
- What is the operating and storage junction temperature range for the FDD86110?
The operating and storage junction temperature range is -55 to +150 °C.
- What is the thermal resistance, junction to case (RθJC), for the FDD86110?
The thermal resistance, junction to case (RθJC), is 0.98 °C/W.
- What is the gate to source threshold voltage (VGS(th)) range for the FDD86110?
The gate to source threshold voltage (VGS(th)) range is 2 to 4 V.
