English
FDD6637
  • Share:

onsemi FDD6637

Manufacturer No:
FDD6637
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 35V 13A/55A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD6637 is a P-Channel PowerTrench® MOSFET produced by onsemi, utilizing proprietary PowerTrench technology to deliver low RDS(on) and optimized BVdss capability. This MOSFET is designed to offer superior performance benefits in various applications. It is RoHS compliant and suitable for general usage across multiple applications.

Key Specifications

ParameterSymbolRating/ValueUnits
Maximum Drain-Source VoltageVDS-35V
Maximum Gate-Source VoltageVGS±25V
Maximum Drain CurrentID-55A
Maximum Junction TemperatureTJ150°C
Drain-Source On-State ResistanceRDS(on)11.6 mΩ @ VGS = -10 V, 18 mΩ @ VGS = -4.5 VmΩ
Total Gate ChargeQg45 nC @ VGS = -10 VnC
Maximum Power DissipationPD57 WW
Package TypeTO-252 (D-PAK)

Key Features

  • High performance trench technology for extremely low RDS(on)
  • RoHS compliant
  • Qualified to AEC Q101
  • Low on-state resistance: RDS(on) = 11.6 mΩ @ VGS = -10 V, RDS(on) = 18 mΩ @ VGS = -4.5 V
  • High current capability: up to -55 A

Applications

  • Inverter applications
  • Power supplies
  • General power switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDD6637 MOSFET?
    The maximum drain-source voltage is -35 V.
  2. What is the maximum gate-source voltage of the FDD6637 MOSFET?
    The maximum gate-source voltage is ±25 V.
  3. What is the maximum drain current of the FDD6637 MOSFET?
    The maximum drain current is -55 A.
  4. What is the maximum junction temperature of the FDD6637 MOSFET?
    The maximum junction temperature is 150 °C.
  5. What is the typical on-state resistance of the FDD6637 MOSFET?
    The typical on-state resistance is 11.6 mΩ @ VGS = -10 V and 18 mΩ @ VGS = -4.5 V.
  6. Is the FDD6637 MOSFET RoHS compliant?
    Yes, the FDD6637 MOSFET is RoHS compliant.
  7. What is the package type of the FDD6637 MOSFET?
    The package type is TO-252 (D-PAK).
  8. What are some common applications of the FDD6637 MOSFET?
    Common applications include inverter applications, power supplies, and general power switching applications.
  9. What is the maximum power dissipation of the FDD6637 MOSFET?
    The maximum power dissipation is 57 W.
  10. What is the total gate charge of the FDD6637 MOSFET?
    The total gate charge is 45 nC @ VGS = -10 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):35 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.45
374

Please send RFQ , we will respond immediately.

Same Series
FDD6637
FDD6637
MOSFET P-CH 35V 13A/55A DPAK

Similar Products

Part Number FDD6637 FDD6632 FDD6635
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 35 V 30 V 35 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 55A (Tc) 9A (Tc) 15A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 14A, 10V 70mOhm @ 9A, 10V 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 4 nC @ 5 V 36 nC @ 10 V
Vgs (Max) ±25V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 20 V 255 pF @ 15 V 1400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 57W (Tc) 15W (Tc) 3.8W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN