Overview
The FDD6637 is a P-Channel PowerTrench® MOSFET produced by onsemi, utilizing proprietary PowerTrench technology to deliver low RDS(on) and optimized BVdss capability. This MOSFET is designed to offer superior performance benefits in various applications. It is RoHS compliant and suitable for general usage across multiple applications.
Key Specifications
Parameter | Symbol | Rating/Value | Units |
---|---|---|---|
Maximum Drain-Source Voltage | VDS | -35 | V |
Maximum Gate-Source Voltage | VGS | ±25 | V |
Maximum Drain Current | ID | -55 | A |
Maximum Junction Temperature | TJ | 150 | °C |
Drain-Source On-State Resistance | RDS(on) | 11.6 mΩ @ VGS = -10 V, 18 mΩ @ VGS = -4.5 V | mΩ |
Total Gate Charge | Qg | 45 nC @ VGS = -10 V | nC |
Maximum Power Dissipation | PD | 57 W | W |
Package Type | TO-252 (D-PAK) |
Key Features
- High performance trench technology for extremely low RDS(on)
- RoHS compliant
- Qualified to AEC Q101
- Low on-state resistance: RDS(on) = 11.6 mΩ @ VGS = -10 V, RDS(on) = 18 mΩ @ VGS = -4.5 V
- High current capability: up to -55 A
Applications
- Inverter applications
- Power supplies
- General power switching applications
Q & A
- What is the maximum drain-source voltage of the FDD6637 MOSFET?
The maximum drain-source voltage is -35 V. - What is the maximum gate-source voltage of the FDD6637 MOSFET?
The maximum gate-source voltage is ±25 V. - What is the maximum drain current of the FDD6637 MOSFET?
The maximum drain current is -55 A. - What is the maximum junction temperature of the FDD6637 MOSFET?
The maximum junction temperature is 150 °C. - What is the typical on-state resistance of the FDD6637 MOSFET?
The typical on-state resistance is 11.6 mΩ @ VGS = -10 V and 18 mΩ @ VGS = -4.5 V. - Is the FDD6637 MOSFET RoHS compliant?
Yes, the FDD6637 MOSFET is RoHS compliant. - What is the package type of the FDD6637 MOSFET?
The package type is TO-252 (D-PAK). - What are some common applications of the FDD6637 MOSFET?
Common applications include inverter applications, power supplies, and general power switching applications. - What is the maximum power dissipation of the FDD6637 MOSFET?
The maximum power dissipation is 57 W. - What is the total gate charge of the FDD6637 MOSFET?
The total gate charge is 45 nC @ VGS = -10 V.