English
FDD6637
  • Share:

onsemi FDD6637

Manufacturer No:
FDD6637
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 35V 13A/55A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD6637 is a P-Channel PowerTrench® MOSFET produced by onsemi, utilizing proprietary PowerTrench technology to deliver low RDS(on) and optimized BVdss capability. This MOSFET is designed to offer superior performance benefits in various applications. It is RoHS compliant and suitable for general usage across multiple applications.

Key Specifications

ParameterSymbolRating/ValueUnits
Maximum Drain-Source VoltageVDS-35V
Maximum Gate-Source VoltageVGS±25V
Maximum Drain CurrentID-55A
Maximum Junction TemperatureTJ150°C
Drain-Source On-State ResistanceRDS(on)11.6 mΩ @ VGS = -10 V, 18 mΩ @ VGS = -4.5 VmΩ
Total Gate ChargeQg45 nC @ VGS = -10 VnC
Maximum Power DissipationPD57 WW
Package TypeTO-252 (D-PAK)

Key Features

  • High performance trench technology for extremely low RDS(on)
  • RoHS compliant
  • Qualified to AEC Q101
  • Low on-state resistance: RDS(on) = 11.6 mΩ @ VGS = -10 V, RDS(on) = 18 mΩ @ VGS = -4.5 V
  • High current capability: up to -55 A

Applications

  • Inverter applications
  • Power supplies
  • General power switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDD6637 MOSFET?
    The maximum drain-source voltage is -35 V.
  2. What is the maximum gate-source voltage of the FDD6637 MOSFET?
    The maximum gate-source voltage is ±25 V.
  3. What is the maximum drain current of the FDD6637 MOSFET?
    The maximum drain current is -55 A.
  4. What is the maximum junction temperature of the FDD6637 MOSFET?
    The maximum junction temperature is 150 °C.
  5. What is the typical on-state resistance of the FDD6637 MOSFET?
    The typical on-state resistance is 11.6 mΩ @ VGS = -10 V and 18 mΩ @ VGS = -4.5 V.
  6. Is the FDD6637 MOSFET RoHS compliant?
    Yes, the FDD6637 MOSFET is RoHS compliant.
  7. What is the package type of the FDD6637 MOSFET?
    The package type is TO-252 (D-PAK).
  8. What are some common applications of the FDD6637 MOSFET?
    Common applications include inverter applications, power supplies, and general power switching applications.
  9. What is the maximum power dissipation of the FDD6637 MOSFET?
    The maximum power dissipation is 57 W.
  10. What is the total gate charge of the FDD6637 MOSFET?
    The total gate charge is 45 nC @ VGS = -10 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):35 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.45
374

Please send RFQ , we will respond immediately.

Same Series
FDD6637
FDD6637
MOSFET P-CH 35V 13A/55A DPAK

Similar Products

Part Number FDD6637 FDD6632 FDD6635
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 35 V 30 V 35 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 55A (Tc) 9A (Tc) 15A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 14A, 10V 70mOhm @ 9A, 10V 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 4 nC @ 5 V 36 nC @ 10 V
Vgs (Max) ±25V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 20 V 255 pF @ 15 V 1400 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 57W (Tc) 15W (Tc) 3.8W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC