FDD5810-F085
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onsemi FDD5810-F085

Manufacturer No:
FDD5810-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.4A/37A DPAK
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The FDD5810-F085 is an N-Channel Logic Level Trench MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling. Although it is currently listed as obsolete and no longer manufactured, it remains a significant component in existing designs and legacy systems. The MOSFET features a drain-source breakdown voltage of 60V and is capable of handling continuous drain currents up to 7.7A at ambient temperature and 36A at case temperature.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)60 V
Continuous Drain Current (Id)7.7 A (Ta), 36 A (Tc)
Drain-Source On-Resistance (Rds On)48 mOhms
Gate-Source Voltage (Vgs)±20 V
Package TypeTO-252AA (Surface Mount)
Power Dissipation (Pd)72 W (Tc)

Key Features

  • N-Channel Logic Level Trench MOSFET for high-performance applications.
  • Low on-resistance of 48 mOhms for efficient power handling.
  • High continuous drain current capability of up to 7.7A at ambient temperature and 36A at case temperature.
  • Drain-source breakdown voltage of 60V for robust operation.
  • Surface mount TO-252AA package for ease of integration.

Applications

The FDD5810-F085 is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.

Q & A

  1. What is the drain-source breakdown voltage of the FDD5810-F085? The drain-source breakdown voltage is 60 V.
  2. What is the continuous drain current rating of the FDD5810-F085 at ambient temperature? The continuous drain current rating at ambient temperature is 7.7 A.
  3. What is the package type of the FDD5810-F085? The package type is TO-252AA (Surface Mount).
  4. What is the on-resistance of the FDD5810-F085? The on-resistance is 48 mOhms.
  5. Is the FDD5810-F085 still in production? No, the FDD5810-F085 is currently listed as obsolete and no longer manufactured.
  6. What are some typical applications for the FDD5810-F085? Typical applications include power supplies, motor control systems, high-frequency switching circuits, and automotive/industrial power management.
  7. What is the maximum gate-source voltage for the FDD5810-F085? The maximum gate-source voltage is ±20 V.
  8. What is the power dissipation rating of the FDD5810-F085 at case temperature? The power dissipation rating at case temperature is 72 W.
  9. Why is the FDD5810-F085 important despite being obsolete? It remains significant in existing designs and legacy systems where it was previously integrated.
  10. Where can I find detailed specifications for the FDD5810-F085? Detailed specifications can be found in the datasheet available on websites such as DigiKey, Mouser, and the official onsemi website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.4A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1890 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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